SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control

Young Bin Im; In Kyu Kim; Seong Pil Son; Youngkwon Kang; Chung Jung Kim; Junhyoung Lee; Jungho Lee; Jesung Lim; Changbeom Jeong

doi:10.4028/p-hF7yKb

Paper Titles

Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
p.39

Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
p.45

The Role of Defects on SiC Device Performance and Ways to Mitigate them
p.51

Emission of Trapped Electrons from the 4H-SiC/SiO₂-Interface via Photon-Irradiance at Cryogenic Temperatures
p.61

SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
p.67

Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
p.71

Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates
p.81

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
p.87

Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
p.93

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434SiC MOSFET Gate Oxide Quality Improvement Method...

SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control

Abstract:

We have investigated carbon behavior resulting from pressure control in furnace thermal oxidation process and evaluated the effect on gate oxide quality resulting from this pressure control. In order to investigate the potential reduction of carbon defects by reducing CO and CO₂, an analysis of oxidized SiC wafers was conducted. To evaluate the effect of pressure control related carbon component change during thermal oxidation, Q_BD characteristic was evaluated in SiC MOS Capacitance. The analysis results revealed on observable decrease in carbon at the SiO₂/SiC interface and the SiO₂ layer. The Q_BD results shown that improved at lower pressure better than those obtained in the general pressure.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

67-70

DOI:

https://doi.org/10.4028/p-hF7yKb

Citation:

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Online since:

August 2024

Authors:

Young Bin Im*, In Kyu Kim, Seong Pil Son, Youngkwon Kang, Chung Jung Kim, Junhyoung Lee, Jungho Lee, Jesung Lim, Changbeom Jeong

Keywords:

Carbon in Oxide, Interface Carbon Defect, Lower Pressure Oxidation, SiC Thermal Oxidation, SiO2/SiC Interface Carbon Reduction

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* - Corresponding Author

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