Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations

Yuki Ohuchi; Hidenori Saeki; Hiroki Sakakima; Satoshi Izumi

doi:10.4028/p-WmPn6z

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Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Near-Interface Defect Decomposition during NO...

Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations

Abstract:

We have used molecular dynamics simulations to investigate the decomposition mechanisms of residual C defects near the interface of 4H-SiC/SiO₂ during NO annealing. We have observed drastically rapid defect decomposition by NO and O₂ mixed gas, which is thermodynamically more realistic, compared with single NO or O₂gas annealing. We have constructed simplified defect decomposition model. This model numerically reproduced the simulation results, suggesting that multi-step and cooperative reactions caused by the coexistence of NO and O₂ during NO annealing effectively promote the decomposition of residual C defects.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

93-98

DOI:

https://doi.org/10.4028/p-WmPn6z

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Cite this paper

Online since:

August 2024

Authors:

Yuki Ohuchi*, Hidenori Saeki, Hiroki Sakakima, Satoshi Izumi

Keywords:

4H-SiC, Molecular Dynamics Simulation, NO Annealing, Oxide Interface

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* - Corresponding Author

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