Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy

Domenica Raciti; Ruggero Anzalone; Mathias Isacson; Nicolo Piluso; Andrea Severino

doi:10.4028/p-KnJ9cE

Paper Titles

Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
p.93

Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO₂Interfaces Revealed by Magnetic Resonance Spectroscopy
p.99

Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
p.105

Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
p.111

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
p.117

A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
p.123

Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
p.129

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
p.135

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
p.143

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Buffer Layer Dependence of Defectivity in 200mm...

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy

Abstract:

The effect of increasing Buffer Layer (BL) thickness on crystal defectivity has been investigated in 4° off-axis 4H-SiC homoepitaxy on 200mm substrates coming from different suppliers. The results, based on optical microscopy and scatter light methods, show a slight increase in morphological defects in the case of a thicker BL with respect to the standard thickness for both suppliers.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

117-121

DOI:

https://doi.org/10.4028/p-KnJ9cE

Citation:

Cite this paper

Online since:

August 2024

Authors:

Domenica Raciti*, Ruggero Anzalone, Mathias Isacson, Nicolo Piluso, Andrea Severino

Keywords:

4H-SiC, Buffer Layer, Defectivity, Homoepitaxy

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Creative Commons CC BY 4.0

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* - Corresponding Author

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