Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers

Jimmy Thörnberg; Gennadi Polisski; Egidio Carria; Mathias Isacson; Björn Magnusson

doi:10.4028/p-X8bhbo

Paper Titles

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
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Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
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Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO₂Interfaces Revealed by Magnetic Resonance Spectroscopy
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Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
p.105

Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
p.111

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
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A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
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Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
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Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
p.135

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Epitaxial Defectivity Characterization Combining...

Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers

Abstract:

Charge biased non-Contact Voltage imaging, QUAD (Quality Uniformity And Defects) is measured on epitaxial layers grown on 25 wafers of 200 [mm] 4H-SiC. Electrical data is analyzed and deviations in the ΔV signal are compared with defectivity observed by the optical surface detection system with UV-PL capability. Reliable statistical data of the relationship between decreasing voltage and defect classification show good detection of triangles and several other defects in the epitaxial layers. The QUAD mapping gives a good first indication of the electrical active defectivity of an epitaxial layer.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

111-115

DOI:

https://doi.org/10.4028/p-X8bhbo

Citation:

Cite this paper

Online since:

August 2024

Authors:

Jimmy Thörnberg*, Gennadi Polisski, Egidio Carria, Mathias Isacson, Björn Magnusson

Keywords:

200 mm, 4H-SiC, Defect Inspection, Epitaxial, Non-Contact CV, QUAD, UP-UV

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

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