Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

Ze Yu Chen; Yafei Liu; Qian Yu Cheng; Shanshan Hu; Balaji Raghothamachar; Reza Ghandi; Stacey Kennerly; Charles Carlson; Dannie Steski; Michael Dudley

doi:10.4028/p-HOdy82

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Analysis of Lattice Damage in 4H-SiC Epiwafers...

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

Abstract:

4H-SiC wafers with 12 µm epilayers were blanket implanted to a depth of 12 µm with 5 x 10¹⁶ cm^-3Al ions via Tandem Van de Graaff accelerator located at Brookhaven National Laboratory with energy range of 13.8 to 65.7 MeV at room temperature, 300 °C and 600 °C. High resolution X-ray diffraction measurements reveal the implanted layers are characterized by tensile strains. However, the dynamic annealing process reduces the level of tensile strains as the temperature of implantation is increased. Analysis indicates that the implant temperature of 600 °C is not sufficient to minimize lattice damage due to implantation and a higher implantation temperature will be required. This preliminary experiment will guide the optimization of implantation conditions for fabricating superjunction devices.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

87-92

DOI:

https://doi.org/10.4028/p-HOdy82

Citation:

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Online since:

August 2024

Authors:

Ze Yu Chen*, Yafei Liu, Qian Yu Cheng, Shanshan Hu, Balaji Raghothamachar, Reza Ghandi, Stacey Kennerly, Charles Carlson, Dannie Steski, Michael Dudley

Keywords:

4H-SiC, Heated High Energy Ion Implantation, HRXRD, Lattice Strain

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Creative Commons CC BY 4.0

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* - Corresponding Author

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