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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Investigating Dislocation Arrays Induced by Seed...

Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography

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Abstract:

The influence of seed preparation on crystal defect generation is studied by investigating the effect of damage from surface scratches not completely removed during polishing on the seed crystal on the nucleation and evolution of dislocation arrays. Synchrotron X-ray topography is conducted on several wafers sliced from a PVT-grown 4H-SiC boule. Topographic results in conjunction with ray tracing simulation reveal the generation of TSD/TMD and TED arrays associated with the scratches in the newly grown wafer adjacent to the seed. Configuration transformation of those arrays is observed as these opposite-signed dislocation pairs composing the arrays were affected by the overgrowth of macro-steps when propagating into the newly grown crystal.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

71-80

DOI:

https://doi.org/10.4028/p-Irzu7d

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Online since:

August 2024

Authors:

Qian Yu Cheng*, Yafei Liu, Ze Yu Chen, Shanshan Hu, Balaji Raghothamachar, Michael Dudley, Vladimir Pushkarev, Kevin Moeggenborg, Gil Chung, Edward Sanchez, Andrey Soukhojak

Keywords:

Crystal Growth, Dislocation Array, Low Angle Grain Boundary, Scratch, Silicon Carbide

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