Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
p.15
p.15
Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
p.23
p.23
Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
p.33
p.33
Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
p.39
p.39
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
p.45
p.45
The Role of Defects on SiC Device Performance and Ways to Mitigate them
p.51
p.51
Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
p.61
p.61
SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
p.67
p.67
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
p.71
p.71
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
Abstract:
Dislocation behaviors after post-growth thermal treatment were investigated by X-ray topography and KOH etching. Generation of prismatic dislocations were observed in X-ray topography, and density of basal plane dislocations (BPDs) increases with annealing temperature and radial temperature gradient. Distribution of newly generated BPDs in the wafer after thermal treatment is correlated to the resolved shear stress arising from radial temperature gradient.
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Periodical:
Defect and Diffusion Forum (Volume 434)
Pages:
45-49
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Online since:
August 2024
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