Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects

Alexandre Savtchouk; Marshall Wilson; Bret Schrayer; Lilliana Gutierrez; Carlos Almeida; Jacek Lagowski

doi:10.4028/p-2btCLo

Paper Titles

Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
p.105

Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
p.111

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
p.117

A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
p.123

Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
p.129

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
p.135

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
p.143

High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
p.149

Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
p.157

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Practical Improvement of Noncontact Production...

Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects

Abstract:

We discuss two defect related practical improvements in the corona noncontact CV metrology, (CnCV) for SiC. The improvements are introduced in response to requests from industrial tool users. The first improvement quantifies mapping of electrically active defects with the QUAD technique (Quality, Uniformity, and Defects). It provides the capability of user selectable die grids directly comparable with Near UV-PL and optical defect mapping. This shall enhance understanding of the device killer defects and help to correlate epilayer defects and device yield. The second improvement introduces auto-remeasurement of outliers appearing in doping measurements on defective sites. This procedure is analogous to that used in the Hg probe technique and it provides a means for correcting defect related distortions in SPC doping monitoring charts.

By email View Pdf

You might also be interested in these eBooks

20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

View Preview

Defects of Solid Semiconductor Structures

View Preview

Info:

Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

129-134

DOI:

https://doi.org/10.4028/p-2btCLo

Citation:

Cite this paper

Online since:

August 2024

Authors:

Alexandre Savtchouk*, Marshall Wilson, Bret Schrayer, Lilliana Gutierrez, Carlos Almeida, Jacek Lagowski

Keywords:

Corona, CV, Doping, Epi, Noncontact, SiC

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] A.A. Burk, M. O'Loughlin, Denis Tsvetkov and S. Ustin, "Industrial Perspective of SiC Epitaxy." Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications 1 (2021): 75-92.

DOI: 10.1002/9783527824724.ch4

Google Scholar

[2] M. Wilson, Compound Semiconductor, 25-6 (2019), pp.20-26.

Google Scholar

[3] V. Pushkarev, T. Rana, M. Gave, E. Sanchez, A. Savtchouk, M. Wilson, D. Marinskiy and J. Lagowski, Solid State Phenomena 342 (2023), pp.99-104

DOI: 10.4028/p-bd78p0

Google Scholar

[4] M. Wilson, D. Greenock, D. Marinskiy, C. Almeida, J. D'Amico and J. Lagowski, "The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects", CS Mantech 2021 Proceedings, Orlando, FL.

Google Scholar

[5] D.K. Schroder, Chapter 9: Charge-based and Probe Characterization, in: Semiconductor Material and Device Characteristics, Wiley-Interscience, Hoboken, New Jersey, 2006, p.523.

Google Scholar

[6] M. Wilson, A. Findlay, A. Savtchouk, J. D'Amico, R. Hillard, F. Horikiri and J. Lagowski, ECS Journal of Solid State Science and Technology, 6(11) S3129-S3140 (2017).

DOI: 10.1149/2.0291711jss

Google Scholar

[7] M. Wilson, D. Greenock, D. Marinskiy, A. Savtchouk, A. Ross, C. Almeida, B. Schrayer, J. D'Amico and J. Lagowski, "Micro-scale Imaging of Electrical Activity of Yield Killer Defects in 4H-SiC with Charge Assisted KFM and UV-Photoluminescence", CS Mantech 2020 Proceedings, Orlando, FL.

DOI: 10.4028/p-3bn937

Google Scholar

[8] M. Wilson, A. Savtchouk, A. Findlay, J. Lagowski, P. Edleman, D. Marinskiy, J. D'Amico, F. Korsos, N. Orsos and M. Csegazine Varga, Material Science Forum 858 (2016), pp.353-356.

DOI: 10.4028/www.scientific.net/msf.858.353

Google Scholar