Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography

Junji Senzaki; Junichi Nishino; Tsutom Osanai

doi:10.4028/p-tZsV2d

Paper Titles

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
p.117

A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
p.123

Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
p.129

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
p.135

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
p.143

High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
p.149

Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
p.157

Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing^®
p.165

Charge Carrier Capture by Prominent Defect Centers in 4H-SiC
p.173

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Development of 3-Channel Inspection Analysis...

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography

Abstract:

3-channel analysis technique consisting of optical inspection, photoluminescence and X-ray topography methods for defect inspection of SiC epitaxial wafers has been investigated. The effectiveness of SiC wafer inspection image correction to enable automatic defect analysis is verified. Next, it is shown that the 3-channel analysis technique improves SiC defect inspection accuracy compared to conventional 2-channel analysis one.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

143-147

DOI:

https://doi.org/10.4028/p-tZsV2d

Citation:

Cite this paper

Online since:

August 2024

Authors:

Junji Senzaki*, Junichi Nishino, Tsutom Osanai

Keywords:

Defect, Inspection Technique, Optical Inspection, Photoluminescence, X-Ray Topography

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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