Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing®

Daichi Dojima; Kaito Tayake; Koki Shigematsu; Kohei Toda; Tadaaki Kaneko

doi:10.4028/p-6lKXar

Paper Titles

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
p.117

A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
p.123

Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
p.129

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
p.135

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
p.143

High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
p.149

Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
p.157

Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing^®
p.165

Charge Carrier Capture by Prominent Defect Centers in 4H-SiC
p.173

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Macro Step Bunching/Debunching Engineering on 4°...

Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing^®

Abstract:

This paper presents an investigation into the surface morphology control of 4H-SiC (0001) wafers cut to 4º off during thermal processing, aiming to suppress the propagation of basal plane dislocations (BPD) into the epitaxial growth layer. Developing methods for debunching rough surfaces with macro step bunching (MSB) using thermal processes removes many of the limitations of the conventional epitaxial growth process. This study presents a surface morphology control method that includes debunching of steps by thermal sublimation etching/growth using the Dynamic AGE-ing^® (DA) method. By controlling the surface morphology before and after growth using this method, the dependence of the BPD-threading edge dislocation (TED) conversion ratio on surface morphology was systematically revealed. By selecting the optimal pre- and post-growth surface morphology, a 100 % BPD-TED conversion ratio was obtained for the 10 mm × 25 mm area. It was indicated that an innovative and stable surface morphology control technique using the DA sublimation process could solve numerous technological challenges in various fields.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

165-172

DOI:

https://doi.org/10.4028/p-6lKXar

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Online since:

August 2024

Authors:

Daichi Dojima*, Kaito Tayake, Koki Shigematsu, Kohei Toda, Tadaaki Kaneko

Keywords:

Epitaxial Growth, Surface Diffusion, Surface Morphology, Thermal Etching

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* - Corresponding Author

References

[1] T. Kimoto, Material science and device physics in SiC technology for high-voltage power devices. Jpn. J. Appl. Phys. 54.4 (2015) 040103.

DOI: 10.7567/jjap.54.040103

Google Scholar

[2] S. Ha, P. Mieszkowski, M. Skowronski and L.B. Rowland, Dislocation conversion in 4H silicon carbide epitaxy. Journal of Crystal Growth 244.3-4 (2002): 257-266.

DOI: 10.1016/s0022-0248(02)01706-2

Google Scholar

[3] H. Matsunami and T. Kimoto, Step-controlled epitaxial growth of SiC: High quality homoepitaxy. Mater. Sci. Eng. R Rep. 20.3 (1997) 125-166.

DOI: 10.1016/s0927-796x(97)00005-3

Google Scholar

[4] T. Kimoto, A. Itoh, H. Matsunami, T. Okano, Step bunching mechanism in chemical vapor deposition of 6H–and 4H–SiC {0001}, Journal of applied physics 81.8 (1997) 3494-3500.

DOI: 10.1063/1.365048

Google Scholar

[5] H. Song, M.V.S. Chandrashekhar, S. Tangali, Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane. ECS J Solid State Sci Technol 4.3 (2014) 71.

DOI: 10.1149/2.0071503jss

Google Scholar

[6] T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T, Shimura and H, Watanabe, Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates. Mater. Sci. 679 (2011) 342-345.

DOI: 10.4028/www.scientific.net/msf.679-680.342

Google Scholar

[7] R. L. Myers-Ward, N.A. Mahadik, V.D. Wheeler, L.O. Nyakiti, R.E. Stahlbush, E.A. Imhoff, K.D. Hobart, C.R. Eddy, Jr, and D.K. Gaskill, Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers. Cryst. Growth Des. 14.11 (2014) 5331-5338.

DOI: 10.1021/cg500830j

Google Scholar

[8] T. Hori, K. Danno, and T. Kimoto, Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition. J. Cryst. Growth 306.2 (2007) 297-302.

DOI: 10.1016/j.jcrysgro.2007.05.009

Google Scholar

[9] Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida, Origin of giant step bunching on 4H-SiC (0001) surfaces, Mater. Sci. 600 (2009) 473-476.

DOI: 10.4028/www.scientific.net/msf.600-603.473

Google Scholar

[10] K. Toda, D. Dojima, K. Kojima, H. Mihara, S. Mitani, and T. Kaneko, Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth, Solid State Phenom. 344 (2023) 9-14.

DOI: 10.4028/p-z108w8

Google Scholar