Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals

Shanshan Hu; Yafei Liu; Ze Yu Chen; Qian Yu Cheng; Balaji Raghothamachar; Michael Dudley; Douglas Dukes; Victor Torres; Liam Young; Samantha Griswold; Hunter Bricetti; Chu Hang Liu; Yi Mei Zhu

doi:10.4028/p-PDb94O

Paper Titles

Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
p.111

Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
p.117

A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
p.123

Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
p.129

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
p.135

Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
p.143

High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
p.149

Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
p.157

Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing^®
p.165

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Analysis of Defect Structures during the...

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals

Abstract:

To better understand the effects of various growth parameters during the early-stages of PVT growth of 4H-SiC on resulting defect structures, multiple short duration growths have been carried out under varying conditions of seed quality, nucleation rate, thermal gradients, and N incorporation. Besides the replication of TSDs/TMDs and TEDs as well as the deflection of TSDs/TMDs into Frank dislocations, synchrotron monochromatic beam x-ray topography (SMBXT) studies also reveal the formation of stacking faults bounded by Frank dislocations. Using ray tracing simulations to characterize the Frank dislocations, three types of stacking faults are revealed: Type 1 stacking fault resulting from 2D nucleation of 6H polytype on terraces; Type 2 stacking fault resulting from macrostep overgrowth of the surface growth spiral steps of TSDs/TMDs which separate into c/2 or c/4 increments; Type 3 stacking fault resulting from vicinal step overgrowth of surface growth spiral steps of TSDs/TMDs which separate into c/4 and 3c/4 increments. Analysis of atomic resolution scanning transmission electron microscopy (STEM) images reveals the mechanism of the Type 3 fault.

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