Paper Titles

Oxidation of High Technology Materials
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Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of Dislocations
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Diffusion Barriers - For Thin Film Metallizations
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Contact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact Scheme
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High Density Interconnect for Advanced VLSI Packaging
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Diffusion in Metallic Thin Films
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High Resolution Transmission Electron Microscopy of Grain Boundaries
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Tunneling Microscopy of Surface Diffusion
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Characterization of Interfacial Chemistry by Analytical Electron Microscopy
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 59High Density Interconnect for Advanced VLSI...

High Density Interconnect for Advanced VLSI Packaging

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Diffusion Processes in High Technology Materials

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Periodical:

Defect and Diffusion Forum (Volume 59)

Pages:

129-136

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.59.129

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Online since:

January 1988

Authors:

A.C. Adams, R.S. Bentson, W.J. Bertram, H.J. Levinstein, W.Q. McKnight, Jacques J. Rubin, B.A. ter Haar

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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