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Characterization of Interfacial Chemistry by Analytical Electron Microscopy
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Solute Interactions in Metals
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Oxygen Diffusion in High T_c-Superconductors
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Tracer Diffusion of ⁶⁰Co and ⁶³Ni in Amorphous NiZr Alloy
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Tracer Diffusion in Pure and Boron-Doped Ni₃Al
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The Behavior of Transition Metals in Silicon during Annealing Transients
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Suppression of Vacancy Diffusion during Short Range Ordering
p.253

Crystallization and Diffusion Studies in Amorphous Ni-Zr Thin Films
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Compound Formation and Interfacial Instability in the Au-Cu-Sn System at Low Temperature
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 59The Behavior of Transition Metals in Silicon...

The Behavior of Transition Metals in Silicon during Annealing Transients

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Diffusion Processes in High Technology Materials

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Periodical:

Defect and Diffusion Forum (Volume 59)

Pages:

239-252

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.59.239

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Online since:

January 1988

Authors:

D.R. Sparks, N.S. Alvi, Mysore A. Dayananda

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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