Energetic Ion Irradiation as Advanced Process for Functionalization of Silicon Nanocrystals in a SiO₂ Matrix

Abstract:

A physical picture of swift heavy ion irradiation effects on ensembles of silicon nanocrystallites (NCs) embedded in a dielectric SiO₂ matrix is given following our study of the experimental investigation of structural, electrical and photoluminescence properties of that system We found that ion irradiation can drastically change the structure of the layer by forming an ordered NC chains along the ion tracks in the 400-1000 nm thick layer. The ion energy and dose are then the main tools for functionalization of our system, from changing the size and the concentration of the NCs, to managing the optical and electrical properties.

• Periodical: Journal of Nano Research (Volumes 18-19)
• Pages: 241-246
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.18-19.241
• Online since: July 2012
• Authors: I.V. Antonova, V.A. Skuratov, I. Balberg
• Keywords: Energetic Ion Irradiation, Nanocrystal Modification, Si Nanocrystals

References

[1] H. M Saavedra, T. J Mullen, P. Zhang, D. C Dewey, S. A Claridge, P. S Weiss, Rep. Prog. Phys. 73, 036501 (2010).

DOI: 10.1088/0034-4885/73/3/036501

[2] B.K. Long, B.K. Keitz C.G. Willson, J Mater. Chem., 17 3575 (2007).

[3] C.T. Black, ACS Nano, 1, 147 (2007).

[4] S.V. Tang, E.M. Lennon, G.H. Fredrickson, E.J. Kramer, C.J. Hawker, Science 322, 429, (2008).

[5] E. Dawi, G. Rizza, A. Vredenberg, Abstracts of Int. Conf. on Ion Beam Modification of Materials, 361 (2008).

[6] I.V. Antonova, M.B. Gulyaev, V.A. Volodin, A.G. Cherkov, D.V. Marin, V.A. Skuratov, J. Jedrzejewski, I. Balberg, Nanotechnology, 20, 095205 (2009).

DOI: 10.1088/0957-4484/20/9/095205

[7] I.V. Antonova, A.G. Cherkov, V.A. Skuratov, M.S. Kagan, J. Jedrzejewski, I. Balberg, Nanotechnology, 20, 185401 (2009).

DOI: 10.1088/0957-4484/20/18/185401

[8] I.V. Antonova, D.V. Marin, V.A. Volodin, V.A. Skuratov, J. Jedrzejewski, I. Balberg, Solid State Phenomena 156 – 158, 523 (2010).

DOI: 10.4028/www.scientific.net/ssp.156-158.523

[9] I. V. Antonova, V. A. Skuratov, J. Jedrzejewski, and I. Balberg, Semiconductors, 44, 482 (2010).

[10] A. Sa'ar, Y. Reichman, M. Dovrat, D. Krapf, J. Jedrzejewski, I. Balberg, Nano Lett., 5, 2443, (2005).

[11] I.V. Antonova , M.B. Gulyaev, E. Savir, J. Jedrzejewski I. Balberg Phys. Rev. B, 77, 125318 (2008).

[12] M. Toulemonde, Ch. Dufour, A. Meftah, E. Paumier, Nucl. Inst. Meth. B, 166-167, 903 (2000).

[13] A. Metah, F. Brisard, J.M. Constantin, E. Dooryhee, M. Hage-Ali, M. Hervieu, J.P. Stoquert, F. Studer, M. Toulemonde, Phys. Rev. B, 49, 12457(1997).

[14] T. Van Dillen, A. Polman, P.R. Onck, E. van der Giessen, Phys. Rev. B, 71, 024103 (2005).

[15] T. van Dillen, M.J.A. de Dood, J.J. Penninkhof, A. Polman, S. Roorda, A.M. Vredenberg, Appl. Phys. Lett., 84, 3591 (2004).

DOI: 10.1063/1.1737480

[16] D. Mathiot, J.P. Schunck, M. Perego, M. Fanciulli, P. Normand, C. Tsamis, D. Tsoukalas, J. Appl. Phys., 94, 2136 (2004).

DOI: 10.1063/1.1589168

[17] R.M.C. de Almeida, S. Goncalves, J.R. Baumvol, F.C. Stediler, Phys. Rev. B, 61, 12992 (2000).

[18] L.W. Yu, K.J. Chen, L.C. Wu, M. Dai, W. Li, X.F. Huang, Phys. Rev. B, 71, 245305 (2005).

[19] L. Wu, M. Dai, X. Huang, W. Li, K. Chen, J. Vac. Sci. Technol. B, 22, 678 (2004).

[20] S. Huang, S. Banerjee, R.T. Tung, S. Oda, Appl. Phys. Lett, 93, 576 (2003).

[21] K. Kim, Phys. Rev. B, 57, 13072 (1998).

[22] Q. Wan, T.H. Wang, M. Zhu, C.L. Lin, Appl. Phys. Lett., 81, 539 (2002).

[23] I.V. Antonova, E.P. Neustroev, S.A. Smagulova, J. Jedrzejewski, I. Balberg, J. Appl. Phys., 106, 064306 (2009).

[24] S.V. Gaponenko, Optical Properties of Semiconductor Nanocrystals, Cambridge University Press, Cambridge, (1998).

[25] A.S. Moskalenko, J. Beracdar, A.A. Prokofiev, I.N. Yassievich, Phys. Rev. B, 76, 085427 (2007).

[26] I.V. Antonova, E.P. Neustroev, S.A. Smagulova, J. Jedrzejewski, I. Balberg, Semiconductor, in press. Figure captures Fig. 1 The average size of Si nanocrystallites, estimated from the experimentally observed energies of the traps in the system and theoretical models in.

[23] (1) and.

[24] (2), as a function of high energy ions dose. Sizes were normalized respectively to the values of 3. 3 and 5. 2 nm. The irradiation was made by Bi ions with an energy of 670 MeV. Fig. 2 The times te of carrier emission from the NCs to the substrate as extracted from our Q-DLTS measurements for pristine and irradiated (Bi, 670 MeV, 8x1012 cm-2) samples. The Si phase contents in the SiO2 layer are given in the figure. Fig. 1 Fig. 2 Energetic Ion Irradiation as Advanced Process for Functionalization of the Silicon Nanocrystals in SiO2 matrix, I.V. Antonova, V.A. Skuratov, I. Balberg.

DOI: 10.4028/www.scientific.net/jnanor.18-19.241