Annealing Temperature Dependence of Optical Properties of Sol-Gel ZnO Thin Films with Different Sol Aging Time

Article Preview

Abstract:

ZnO thin films on glass substrates have been successfully fabricated by sol-gel method for various aging time and annealing temperature. X-ray diffraction (XRD) patterns showed the crystallites at (100), (002) and (101) plane of hexagonal wurtzite structure. Atomic force microscope (AFM) images were used to investigate the surface morphology. The transmittance, energy gap, Urbach energy and photoluminescence (PL) of samples were investigated to explore the effects of annealing temperature on optical properties of ZnO thin films under different sol aging time. The transmittance spectra of thin films aged for 24 hours and 48 hours revealed the enhanced transmittance in visible region as rising annealing temperature, also, the optical band gap of the samples increased and Urbach energy decreased. The photoluminescence (PL) spectra of samples aged for 24 hours and 48 hours were studied and found the increased ultraviolet emission at ~387 nm, and various decreased visible emissions with rising annealing temperature. Nevertheless, the excessive sol aging time for 72 hours deteriorated the optical characteristics of thin films, resulting in that transmittance, energy gap and ultraviolet emission declined, and visible emissions increased with rising annealing temperature. The optical performances of the ZnO films aged for different time have no the same dependence of annealing temperature.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

211-217

Citation:

Online since:

July 2017

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] R. V. Vidap, S. S. Bandgar, G. S. Shahane, Structural, Morphological and Optical Properties of Sol-Gel Spin Coated Al-doped Zinc Oxide Thin Films, J. Nanoscience and Nanoengineering 1 (2015) 259-264.

Google Scholar

[2] Y. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim L, Next Generation of Oxide Photonic Devices: ZnO-based Ultraviolet Light Emitting Diodes, J. Appl. Phys. 88 (2006) 241108.

DOI: 10.1063/1.2210452

Google Scholar

[3] Gong H, Hu. J. Q, Wang J. H, Nano-crystalline Cu-doped ZnO Thin Films Gas Sensor for CO, J. Sens. &. Actu. B: Chemical 115 (2006) 247-251.

DOI: 10.1016/j.snb.2005.09.008

Google Scholar

[4] Lin L. Y, Kim D. E, Effect of Elevated Annealing Temperature on the Microstructure and Nano-hardness of ZnO Films Deposited by the Sol-gel Process, Inter. J. Prec. Engin. &. Manu. 13 (2012) 2005-(2009).

DOI: 10.1007/s12541-012-0264-3

Google Scholar

[5] M Sahal, B Hartiti, A Ridah, M Mollar, B Marí, Structural, Optical, and Electrical Properties of ZnO Thin Films Deposited by Sol-gel method, Microelectronic J. 39 (2008) 1425-1428.

DOI: 10.1016/j.mejo.2008.06.085

Google Scholar

[6] Yoshino K, Tanaka M, Ide A, Stuarr A, Boden, Drren M, Bagnall, Munoru Y, Surface Morphology of Transparent Conductive ZnO Film Grown by DC Sputtering Method, J. Adv. Mate. Rese. IV. 894, 403-407 (2004).

DOI: 10.4028/www.scientific.net/amr.894.403

Google Scholar

[7] N. V. Kaneva, C. D. Dushkin, Preparation of nanocrystalline thin films of ZnO by sol-gel dip coating, Bulgarian Chem. Commun. 43 (2011) 259-263.

Google Scholar

[8] Santhosh V. S, Babu K. R, Deepa M, Influence of Fe Dopant Concentration and Annealing Temperature on the Structural and Optical Properties of ZnO Thin Films Deposited by Sol-gel Method, J. Mater. Sci.: Materials in Electronics 25 (2014) 224-232.

DOI: 10.1007/s10854-013-1576-5

Google Scholar

[9] Wen B, Liu C. Q, Fei W. D, Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating, Chem. Rese. in Chinese Universities 30 (2014) 509-512.

DOI: 10.1007/s40242-014-3497-0

Google Scholar

[10] Davood R, Taha R, The effect of heat treatment on the physical properties of sol-gel derived ZnO thin films, Appl. Surf. Sci. 255 (2009) 5812-5817.

DOI: 10.1016/j.apsusc.2009.01.010

Google Scholar

[11] S. ILICAN, Y. CAGLAR, M. CAGLAR, Preparation and characterization of ZnO thin films deposited by sol-gel spin coating method, J. Optoelec. & Adv. Mater. 10 (2008) 2578-2583.

DOI: 10.1016/j.tsf.2009.03.037

Google Scholar

[12] Sh. U. Yuldashev, G. N. Panin, T. W. Kang, Electrical and optical properties of ZnO thin films grown on Si substrates, J. Appl. Phys. 100 (2006) 013704.

DOI: 10.1063/1.2209773

Google Scholar

[13] G. Vijayaprasath, R. Murugan, T. Mahalingam, Y. Hayakawa, G. Ravi, Preparation of higtly oriented Al: ZnO thin films by sol-gel method their characterization, J. Alloys and Compd. 649 (2015) 275-284.

DOI: 10.1016/j.jallcom.2015.07.089

Google Scholar

[14] Jitao Li, Dinyu Yang, Xinghua Zhu, Hui Sun, Xiuying Gao, Peihua Wangyang, Haibo Tian, Effects of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method, Funct. Mater. Lett. 9 (2016).

DOI: 10.1142/s1793604717500102

Google Scholar