Comparative Quantum Analysis of Si/Ge Channel Tri-Gate Mosfets

Abstract:

In this article we have developed an analytical model for Tri-gate Metal Oxide Semiconductor Field Effect Transistor (TG MOSFET) including Quantum effects for High-k/Ge material. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for charge centroid is obtained and then an inversion charge model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. The compact model is shown to reproduce transfer characteristics, transconductance and C-V curves of Tri-gate MOSFETs using the model and is compared with the device for Si/SiO₂ material. The results of both the model are compared to the simulated results. The comparison shows the accuracy of the proposed model for the high-k and Ge material.

• Periodical: Journal of Nano Research (Volume 58)
• Pages: 32-39
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.58.32
• Online since: June 2019
• Authors: P. Vimala*, N.R. Nithin Kumar
• Keywords: Inversion Charge, Inversion Charge Density, Inversion Layer Centroid, Quantum Effect, Tri-Gate MOSFETs

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