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Properties of Soft BaTiO₃ Ceramics for Ferroelectric Thin Film Devices
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Reduction of Leakage Current in PbTiO₃ Film Fabricated by MOCVD
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Orientation and Dielectric Properties of Sol-Gel Derived PbTiO₃ Thin Film
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Microstructure and Electric Properties of Sol-Gel PLZT Thin Films
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Fatigue and Imprint Properties of Sol-Gel Derived (Pb,La)(Zr,Ti)O₃ Capacitors
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Orientation Control of SrBi₂Ta₂O₉ Epitaxial Thin Films and their Properties
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CVD of SrBi₂Ta₂O₉(SBT) Thin Film from Bi(CH₃)₃ - Sr[Ta(O·C₂H₅)₆]₂ - O₂ System
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Dielectric Properties of Electrophoretically Fabricated PbZrO₃/PbTiO₃ Ceramic Composites
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 169-170Microstructure and Electric Properties of Sol-Gel...

Microstructure and Electric Properties of Sol-Gel PLZT Thin Films

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Electroceramics in Japan II

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Periodical:

Key Engineering Materials (Volumes 169-170)

Pages:

131-134

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.169-170.131

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Online since:

June 1999

Authors:

Mineharu Tsukada, Jeffrey S. Cross, M. Fujiki, Kiyotaka Matsuura, H. Ashida, S. Otani

Keywords:

(Pb,La)(Zr,Ti)O₃, CSD, FeRAM, Film Thickness, Leakage, Microstructure, Qsw

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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