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HomeKey Engineering MaterialsKey Engineering Materials Vols. 238-239Evaluation of Surfaces of Single SiC Crystal...

Evaluation of Surfaces of Single SiC Crystal Polished with Various Kinds of Particles

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Advances in Abrasive Technology V

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Periodical:

Key Engineering Materials (Volumes 238-239)

Pages:

175-182

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.238-239.175

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Online since:

April 2003

Authors:

Junji Watanabe, Makoto Fujimoto, Yasumichi Matsumoto, Noritaka Kuroda, Osamu Eryu

Keywords:

Cr₂O₃ Abrasive, FT-IR, Mechanochemical Polishing, Polishing Rate, Silicon Carbide Single Crystal, Surface Morphology, TiO₂ Photo-Catalyst, X-Ray Photoelectron Spectroscopy (XPS)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] R.F. Davis, Physica B 185 (1993) 1.

[2] J.A. Powell, D.J. Larkin, and P.B. Abel, J. Electron. Mater., 24, (1995) 295.

[3] M. Kikuchi, Y. Takahashi, and T. Suga, J. Am. Ceram. Soc., 75, [1] (1999) 189.

[4] J. Watanabe, T. Takehisa, O. Eryu, K. Nakashima, G. Yu, and K. Yamamoto, Advances in Abrasive Technology ΥΥΥΥ, (2000) 117. -0.002 -0.001 0 0.001 0.002 0.003 -10 -5 0 5 10 Voltage(V) Current(A) Fig.11 V-I characteristics of model device formed on the silicon terminated surface polished with Cr2O3 disk