Paper Titles

Basic Examination for Nodulation-Doped (Zn,Mg,Al)O/ZnO
p.103

Low Temperature Synthesis of Titania and Titanates
p.107

Preparation and Semiconducting Properties of Nb-Doped-SrTiO₃ Thin Films having Controlled Crystal Orientation by MOCVD
p.111

Deposition and Evaluation of YBCO Thin Films by Visible - Light Pulsed Laser Ablation Method
p.117

Fabrication and Evaluation of Ca,Sr-Doped-LaCrO₃ Thin Film Electric Heaters
p.121

Control of Crystallinity of Alkoxy-Derived Zirconia Thin Films by UV Irradiation
p.125

Preparation and Luminescent Properties of Eu-Doped BaTiO₃ Thin Films by Sol-Gel Process
p.129

Preparation of TiO₂ Thin Film for Dye Sensitized Solar Cell Deposited by Electrophoresis Method
p.133

Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics
p.137

HomeKey Engineering MaterialsKey Engineering Materials Vol. 248Fabrication and Evaluation of Ca,Sr-Doped-LaCrO3...

Fabrication and Evaluation of Ca,Sr-Doped-LaCrO₃ Thin Film Electric Heaters

Article Preview

Abstract:

You might also be interested in these eBooks

Electroceramics in Japan VI

Info:

Periodical:

Key Engineering Materials (Volume 248)

Pages:

121-124

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.248.121

Citation:

Cite this paper

Online since:

August 2003

Authors:

Kenichi Wakisaka, Hiroyasu Kado, Shinzo Yoshikado

Keywords:

Aluminum (Al), High Temperature Heater, LaCrO₃, RF Magnetron Sputtering Method, Thin Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. Sofue, S. Yoshikado, Trans. IEE of Japan., 119-A (1999), p.636.

[2] S. Hayashi, S. Yoshikado, Key Engineering Materials., 216 (2002), p.105. e-mail: syoshika@mail. doshisha. ac. jp, fax: 0774-65-6801�.

[6] 0. 01.

[2] [4] [6] 0. 1.

[2] [4] [6] [1] [2] [4] Normalized Conductivity 1300 1200 1100 1000 Temperature of annealing / ͠ alumina Si(100) Fig. 7. XRD patterns of thin films after thermal annealing at 1400 � C for 2 hours. � Fig. 8. The heating state of the thin film heater at 900 � C fabricated using thin film deposited on an alumina substrate at 700 � C. Intensity / a. u.

[80] [60] [40] [20] 2θ / degree (110) (002) (420) (116) (224) (400) (132) (024) (312) (222) (220) (004)(202) (022) (112) (404) (044) Target (La0. 85Ca0. 15)CrO3 alumina substrate Si(100) substrate � � � : peak of Si(100) Fig. 6. The relationship between normalized conductivity and thermal annealing temperatures of (La0. 85Ca0. 15)CrO3 thin films annealed for 2 hours.

[10] mm.