Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics

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Edited by:

T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki

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137-142

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T. Kiguchi et al., "Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics", Key Engineering Materials, Vol. 248, pp. 137-142, 2003

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August 2003

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[1] M. Suzuki, J. Ceram. Soc. Japan, 103, (1995) p.1099.

[2] C. Pellet, Thin Solid Films, 175 (1989) p.23.

[3] A. Kvist, Physics of Electrolytes, Vol. 2, Academic Press (1972) p.423.

[4] A.S. Grove, Physics and Technology of Semiconductor devices, John an Weiley & Sons (1985) p.372.

[5] Ping Li, I-Wei Chen, and James E Penner-Hahn, J. Am. Ceram. Soc, 77 (1994) p.118 tkiguchi@cama. titech. ac. jp Fig. 4 Relationship between hysteresis width and ionic radius of dopant cations.

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