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HomeKey Engineering MaterialsKey Engineering Materials Vol. 248Improvement of C-V Characteristics and Control of...

Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics

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Electroceramics in Japan VI

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Periodical:

Key Engineering Materials (Volume 248)

Pages:

137-142

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.248.137

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Online since:

August 2003

Authors:

Takanori Kiguchi, Kazuo Shinozaki, Naoki Wakiya, Nobuyasu Mizutani

Keywords:

Buffer Layer, C-V Characteristics, Gate Dielectrics, High Resolution Transmission Electron Microscopy, Ion Drift, Rare Earth Element (REE), SiO₂, Zirconia

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[2] C. Pellet, Thin Solid Films, 175 (1989) p.23.

[3] A. Kvist, Physics of Electrolytes, Vol. 2, Academic Press (1972) p.423.

[4] A.S. Grove, Physics and Technology of Semiconductor devices, John an Weiley & Sons (1985) p.372.

[5] Ping Li, I-Wei Chen, and James E Penner-Hahn, J. Am. Ceram. Soc, 77 (1994) p.118 tkiguchi@cama. titech. ac. jp Fig. 4 Relationship between hysteresis width and ionic radius of dopant cations.