Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor : I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area

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Edited by:

T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki

Pages:

173-178

DOI:

10.4028/www.scientific.net/KEM.248.173

Citation:

S. Mizukami et al., "Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor : I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area", Key Engineering Materials, Vol. 248, pp. 173-178, 2003

Online since:

August 2003

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