Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area

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Edited by:

T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki

Pages:

165-168

DOI:

10.4028/www.scientific.net/KEM.248.165

Citation:

K. Shimizu et al., "Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area", Key Engineering Materials, Vol. 248, pp. 165-168, 2003

Online since:

August 2003

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