Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area

Kan Shimizu; Naoki Wakiya; Satoshi Mizukami; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.4028/www.scientific.net/KEM.248.165

Paper Titles

Safety and Cycle Life of Non-Aqueous Lithium Cells with Organic Additives
p.147

Lithium Intercalation Properties of Hydrogen Octatitanate Hydrates with Tunnel Structure
p.151

Investigation of Lithium Ion Diffusion Behavior in a Li₄Ti₅O₁₂ Thin Film Electrode by In Situ UV-Visible Measurements
p.155

Grain-Size Dependence of the Characteristics of Electromagnetic Wave Absorbers of Ferrite-SiO₂ Composites
p.161

Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe₂O₄ Thin Film on Gate Area
p.165

Orientation Control and Domain Structure of Epitaxial (Ni,Zn)Fe₂O₄ Thin Film for Ferromagnetic Memory Applications
p.169

Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor : I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area
p.173

Residual Stress of Multilayer Ceramic Capacitors (MLCCs)
p.179

Effect of Ho Amount on Microstructure and Electrical Properties of Ni-MLCC
p.183

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Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe₂O₄ Thin Film on Gate Area

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Key Engineering Materials (Volume 248)

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165-168

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.248.165

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Online since:

August 2003

Authors:

Kan Shimizu, Naoki Wakiya, Satoshi Mizukami, Kazuo Shinozaki, Nobuyasu Mizutani

Keywords:

Electrical Properties, Ferrite, Hall-Effect, Magnetic Field, Memory, PLD

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