Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area

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T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki

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165-168

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K. Shimizu et al., "Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics by Epitaxial (Mn, Zn)Fe2O4 Thin Film on Gate Area", Key Engineering Materials, Vol. 248, pp. 165-168, 2003

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August 2003

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