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HomeKey Engineering MaterialsKey Engineering Materials Vol. 248Effects of SiO2-Based Additives on Bi-Based...

Effects of SiO₂-Based Additives on Bi-Based Layer-Structured Ferroelectrics

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Electroceramics in Japan VI

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Periodical:

Key Engineering Materials (Volume 248)

Pages:

41-44

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.248.41

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Online since:

August 2003

Authors:

Kazumi Kato, Hiroshi Ishiwara

Keywords:

Bi₄Ti₃O₁₂(BIT), Crystallization Behavior, Electrical Properties, Ferroelectric Thin Film, SiO₂-Based Additives

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott, Nature, 374 (1995), p.627.

[2] B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo, Nature, 401 (1999), p.682.

[3] T. Kijima and H. Ishiwara, Ferroelectrics, 271 (2002), p.289.

[4] T. Kijima and H. Ishiwara, Jpn. J. Appl. Phys., 41 (2002), p. L20. e-mail: kzm. kato@aist. go. jp -50 0 50-6 -4 -2 0 2 4 6 Voltage (V) BIT443-0. 05Bi2O3·SiO2 BIT443-0. 10Bi2O3·SiO2.