Effects of SiO2-Based Additives on Bi-Based Layer-Structured Ferroelectrics

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T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki

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41-44

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K. Kato and H. Ishiwara, "Effects of SiO2-Based Additives on Bi-Based Layer-Structured Ferroelectrics", Key Engineering Materials, Vol. 248, pp. 41-44, 2003

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August 2003

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[3] T. Kijima and H. Ishiwara, Ferroelectrics, 271 (2002), p.289.

[4] T. Kijima and H. Ishiwara, Jpn. J. Appl. Phys., 41 (2002), p. L20. e-mail: kzm. kato@aist. go. jp -50 0 50-6 -4 -2 0 2 4 6 Voltage (V) BIT443-0. 05Bi2O3·SiO2 BIT443-0. 10Bi2O3·SiO2.