Effect of Starting Materials on Deposition Behavior, Crystal Structure and Electrical Properties of MOCVD-PZT Films

Tomohiko Ozeki; Hiroshi Funakubo

doi:10.4028/www.scientific.net/KEM.248.57

Paper Titles

Effects of SiO₂-Based Additives on Bi-Based Layer-Structured Ferroelectrics
p.41

Structural and Electrical Properties of (Bi,La)₄Ti₃O₁₂ Thin Films with a Bi₂O₃ Top-Layer Prepared by a Chemical Solution Deposition Method
p.45

Orientation Control of Bi-La-Ti-O Thin Films Derived by Chemical Solution Deposition Method
p.49

Effect of Source Supply Method on Microstructure Development in PZT Thin Films by Pulsed Metalorganic Chemical Vapor Deposition
p.53

Effect of Starting Materials on Deposition Behavior, Crystal Structure and Electrical Properties of MOCVD-PZT Films
p.57

Fabrication of Epitaxially Grown PLZT Patterned Microstructures Using a Sol-Gel Method
p.61

Effective Buffer Structures and Dielectric Properties of Epitaxial Pb(Mg_1/3Nb_2/3)O₃ Thin Films on Si Substrates
p.65

Preparation of Barium Titanate Patterned Microstructures by a Novel Sol-Electrodeposition Method Using a Highly Concentrated Alkoxide Solution
p.69

Dielectric Characteristics of SrTiO₃ Precursor Thin Film Prepared on Self-Assembled Monolayers by the Liquid Phase Deposition Method
p.73

HomeKey Engineering MaterialsKey Engineering Materials Vol. 248Effect of Starting Materials on Deposition...

Effect of Starting Materials on Deposition Behavior, Crystal Structure and Electrical Properties of MOCVD-PZT Films

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Key Engineering Materials (Volume 248)

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57-60

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https://doi.org/10.4028/www.scientific.net/KEM.248.57

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August 2003

Authors:

Tomohiko Ozeki, Hiroshi Funakubo

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MOCVD, PZT, Starting Materials Dependency

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References

[1] A. Mannish: Ferroelectrics 102 (1990) p.69.

Google Scholar

[2] T. Li, P. Zawadzki and R. Stall: Integ. Ferro. 18 (1997) p.155.

Google Scholar

[3] C. M. Foster, G. R. Bai, R. Csencsits, J. Vetrone, R. Jammy, L. A. Wills and Jun Amano: J. Appl. Phys. 8 (1997) p.2349.

Google Scholar

[4] A. Jones, T. Leedham, P. Wright, D. Williams, M. Crosbie, H. Davis, K. Fleeting and P. Obrien: J. Euro. Ceram. Soc. 19 (1999) p.1431.

Google Scholar

[5] A. Jones, T. Leedham, P. Wright, M. Crosbie, D. Williams, K. Fleeting, H. Davis, D. Otway, and P. Obreien: Chem. Vapor. Depo. 4 (1998) p.197.

Google Scholar

[6] K. Nagashima, M. Aratani and H. Funakubo: Jpn. J. Appl. Phys. 39 (2000)p.996.

Google Scholar

[7] M. Aratani, T. Ozeki and H. Funakubo: Jpn. J. Appl. Phys. 40 (2000)p.4126.

Google Scholar

[8] M. Aratani, K. Nagashima and H. Funakubo: Jpn. J. Appl. Phys. 40 (2000)p. L343.

Google Scholar

[9] T. Matuszaki, N. Okuda, K. Shinbozaki, N. Mizutani, and H. Funakubo: Jpn.J. Appl. Phys. 37 (1998) p.6229.

Google Scholar

[10] H. Funakubo, K. Nagashima, M. Aratani, K. Tokita, T. Oikawa, T. Ozeki and K. Saito: Proc. Metar. Res. Soc. 688 (2002) p. C1. 1. 1.

Google Scholar

[11] C. Foster, G. Bai, R. Csencisits, J. Vetrone, R. Jammy, L. Wills, E. Carr and J. Amano: J. Appl. Phys. 81 (1997) p.2349.

Google Scholar

[12] M. Okada and K. Tominaga: Ooyobutsuri 61(1992) p.1152 (in Japanese).

Google Scholar

[13] M. Aratani, K. Nagashima, T. Iijima, M. Mizuhira and H. Funakubo, Jpn.J. Appl. Phys. 39 (2000) p.3591. e-mail : funakubo@iem. titech. ac. jp, fax : +81-45-924-5446, http: /f-lab. iem. titech. ac. jp.

DOI: 10.1143/jjap.39.3591

Google Scholar