Authors: Ai Min Wu, Hong Yun Yue, X.Y. Zhang, Fu Wen Qin, T.J. Li, Xin Jiang
Abstract: The silicon nitride films have been deposited by Electron Cyclotron Resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) method at low temperature, and the pure nitrogen is introduced into the ECR chamber as the plasma gas, the silane(Ar diluted, Ar:SiH4=19:1) is used as precursor gas. The optimum deposition parameters of SiN films for photovoltaic application as an efficient antireflection coating(ARC) have been investigated. The actual composition of the films will be varied with the deposition conditions, such as gas flow rate ratio(N2/SiH4), substrate temperature, and microwave power. The effect of deposition parameters on the optical performance of SiN films was determined by Ellipsometry. The Si-N and N-H stretching characteristic peaks of SiN films have been observed by FTIR spectroscopy. Results shown that uniform silicon nitride films with low hydrogen content can be deposited at high deposition rate(10.7nm/min), and the refractive index increased with the increasing of substrate temperature and microwave power. The film shows good optical properties (refractive index is 2.0 or so) and satisfied surface quality (average roughness is 1.45nm) when the deposition parameter is 350oC and microwave power is 650W.
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Authors: M. Mostafizur Rahman, Shaon Talukdar, Mohammad Asaduzzaman Chowdhury, Rasel Khan, Abdullah A. Masum, Nurul Islam
Abstract: A hot filament thermal chemical vapor deposition (CVD) reactor was used to deposit solid thin films on stainless steel 316 (SS 316) and stainless steel 201 (SS 201) substrates at different flow rates of acetylene (C2H2) gas. The variation of thin film deposition rate with the variation of gas flow rate has been investigated experimentally. During experiments are conducted under gas flow rate (1-5) lit/min gas flow rate, duration of deposition (10-60 min), pressure (0.2-1 bar), average surface roughness (0.3-1.05) µm and temperature 800 °C considered. Experimental results show that deposition rate on SS 316 and SS 201 increases with the increase in gas flow rate. The deposition rate also shows increasing trend with pressure and duration of deposition. Under the above mentioned experimental conditions deposition is found to be maximum of SS-316 compared to SS-201. In relation to roughness the maximum deposition is found at 0.5 microns but comparing the both materials -316 and-201 highest of deposition rate is obtained from SS-316.
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Authors: Jian Liu, Jie Liu, Xing Long Leng, Fu Rong Qu
Abstract: The film package of organic device plays an important part in organic electronics manufacturing. In order to get high efficiency encapsulation film material, we developed a set of inductively coupled plasma chemical vapor deposition system (ICP-PECVD). A process study on Organic/inorganic hybrid material deposition was carried out for permeation barrier application. In the study, the effects of plasma power, bias power and deposition temperature on film properties were investigated. Fourier transform infrared spectrometry (FTIR), ellipsometer and transmission electron microscopy (TEM) were used to characterize the film properties. The increase of ICP power is favor to SiOx growth with limits. Bias power increases deposition rate. Film density will increase with the rise of deposition temperature. It was found that the ratio of O2/HMDSO flow rate was the key factor to obtain organic layer or inorganic layer. Since the ratio of O2/HMDSO flow rate increase to 10:1, HMDSO will be completely oxidized and Si-O-Si bonds are formed. As the result, the organic film can be obtained with the no oxygen deposition process. Hybrid film between organic film and inorganic film can be deposited under the condition of O2/HMDSO gas flow ratio less than 10:1. Water vapor transmission rates (WVRT) of organic film, inorganic film and organic/inorganic stacks are also tested. The experimental results show that the inorganic thin film has good performance in water or oxygen permeation; organic thin film is mainly for flexibility and inorganic film growth stress release. And interfacial characteristics between inorganic film and organic film have influence on water and oxygen barrier. As result, we obtained the single inorganic film with WVRT of 4.3×10-2g/m2 day and the four cycles organic / inorganic alternating structure film with WVRT of 3.66×10-4g/m2 day.
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