Silicon Nitride Films Deposited by Low Pressure Chemical Vapor Deposition from SiH4-NH3-N2 System

Xue Jian Liu; Zhi Yong Huang; Li Ping Huang

doi:10.4028/www.scientific.net/KEM.264-268.643

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Silicon Nitride Films Deposited by Low Pressure Chemical Vapor Deposition from SiH₄-NH₃-N₂ System
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Joining Mechanisms in Electrostatic Bonding
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Silicon Nitride Films Deposited by Low Pressure Chemical Vapor Deposition from SiH₄-NH₃-N₂ System

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Key Engineering Materials (Volumes 264-268)

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643-648

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https://doi.org/10.4028/www.scientific.net/KEM.264-268.643

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May 2004

Authors:

Xue Jian Liu, Zhi Yong Huang, Li Ping Huang

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Film Composition, Growth Kinetic, LPCVD, Silicon Nitride Films

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DOI: 10.1016/s0040-6090(98)01587-9

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