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HomeKey Engineering MaterialsKey Engineering Materials Vol. 269The Effect of Nb Doping to Control the Oxygen...

The Effect of Nb Doping to Control the Oxygen Defect and Improve C-V Properties of PLD Prepared YSZ Thin Film

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Electroceramics in Japan VII

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Periodical:

Key Engineering Materials (Volume 269)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.269.233

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Online since:

August 2004

Authors:

Naoya Tajiri, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Keywords:

Buffer Layer, C-V Properties, Nb-Doping, Oxygen Defects, PLD, Thin Film, YSZ

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] S. Horita, et. al., Mater. Sci. Eng. B54 (1998), pp.79-83.

[2] Z. wag, Z.Q. Chen, J. Zhu, S.J. Wang, X. Guo, Radiation Physics and Chemistry 58(2000), pp.691-701.

[3] N. Wakiya, T. Moriya, K. Shinozaki and N Mizutani, Mater. Res. Soc. Symp. Proc. 747(2003), pp.153-158.

[4] T. kiguchi, N. Wakiya, T. Moriya, K. Shinozaki and N Mizutani, Preprints of Annual Meeting of The Ceramics Society of Japan 2K10(2003), p.284.