AEM Investigation of Interface Structure of Y2O3-Ta2O5 Co-Doped Zirconia Buffer Layer

Takanori Kiguchi; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.4028/www.scientific.net/KEM.269.237

Paper Titles

Microwave Dielectric Film by Aerosol Deposition Method
p.211

Measurement of Micro-Wave Dielectric Properties of SrTiO₃ Substrate Thin Plates Using Planar Electrodes
p.215

Dielectric Measurement of BaTiO₃-Based Ceramics in RF Region Using Electric Length Calibration Method
p.219

Characteristics of Composite Electromagnetic Wave Absorber Made of Ni-Zn Ferrite and Isolated SiO₂ Particles
p.223

Dielectric Properties and its Frequency Dependence of BaTiO₃ Thin Film Single-Layer Capacitor that is Applicable to Multilayer Structure
p.229

The Effect of Nb Doping to Control the Oxygen Defect and Improve C-V Properties of PLD Prepared YSZ Thin Film
p.233

AEM Investigation of Interface Structure of Y₂O₃-Ta₂O₅ Co-Doped Zirconia Buffer Layer
p.237

Formation and its Photovoltaic Effect of Layered Ferroelectric Film Structure
p.241

Improvement of Magnetic Properties of (111)-Epitaxial Nickel-Zinc-Ferrite Thin Films Deposited on Si Platform
p.245

HomeKey Engineering MaterialsKey Engineering Materials Vol. 269AEM Investigation of Interface Structure of...

AEM Investigation of Interface Structure of Y₂O₃-Ta₂O₅ Co-Doped Zirconia Buffer Layer

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Key Engineering Materials (Volume 269)

Pages:

237-240

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.269.237

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Online since:

August 2004

Authors:

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Keywords:

Buffer Layer, C-V Characteristics, Depth Profile, Interface Trapped Charge, SiO_x, Ta₂O₅, TEM, Zirconia

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