Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO3 Thin Films

Kazuyuki Suzuki; Kiyotaka Tanaka; De Sheng Fu; Kaori Nishizawa; Takeshi Miki; Kazumi Kato

doi:10.4028/www.scientific.net/KEM.269.49

Paper Titles

Radiation and Evaluation of X-Rays Using Electric Charge Generated by Temperature Change of LiNbO₃ Single Crystal
p.31

Low Temperature Sintering of (Pb_0.92Sr_0.06)(Zr_0.52Ti_0.46Nb_0.02)O₃ Ceramics
p.35

Polarization Switching in CaBi₄Ti₄O₁₅ Ferroelectric Thin Films
p.41

Giant Ferroelectric Polarization in Polar-Axis-Oriented Bi_4-xPr_xTi₃O₁₂ Polycrystalline Thin Films
p.45

Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO₃ Thin Films
p.49

Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with Polar-Axis Orientation
p.53

Composition Dependence of Lead-Free Ferroelectric Ba(Ti,Zr)O₃ Thin Films Fabricated by Chemical Solution Deposition Process
p.57

Preparation and Characterization of Lead Zirconate Titanate Thin Films on Si Substrate by Metal-Organic Chemical Vapor Deposition
p.61

Optical Properties of PLZT Thin Films Fabricated by a Sol-Gel Method
p.65

HomeKey Engineering MaterialsKey Engineering Materials Vol. 269Construction of MFIS Structure Using...

Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO₃ Thin Films

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Key Engineering Materials (Volume 269)

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49-52

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.269.49

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Online since:

August 2004

Authors:

Kazuyuki Suzuki, Kiyotaka Tanaka, De Sheng Fu, Kaori Nishizawa, Takeshi Miki, Kazumi Kato

Keywords:

(Y,Yb)MnO₃, Alkoxy-Derived Precursor, C-V Characteristics, FET-Type Nonvolatile Memory, Leak Current Density, MFIS Structure, Y₂O₃

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