Study on Si Dependence of RB-SiC Thermoelectric Properties

Guan Jun Qiao; Y.W. Shi; Ji Qiang Gao; Hong Jie Wang; Jian Feng Yang; Zhi Hao Jin

doi:10.4028/www.scientific.net/KEM.280-283.401

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283Study on Si Dependence of RB-SiC Thermoelectric...

Study on Si Dependence of RB-SiC Thermoelectric Properties

Abstract:

The effects of free silicon on thermoelectric properties of reaction-bounded silicon carbide (RB-SiC) were studied. RB-SiC ceramic consists of some free silicon after reaction sintering. Some RB-SiC samples were reheated at high temperature in vacuum to adjust silicon content. The results showed that free silicon affects thermoelectric properties remarkably, especially for the thermoelectric power. A surprising phenomenon was found in SiC/Si composite consisting ~20wt% free-Si, i.e., thermoelectric power, figure of merit Z and ZT are all sharply increased above 400oC. The peak value (4.2X10-4) of ZT appears in original SiC/Si composite at about 500oC, which is increased more than 1000 times than that at room temperature.