Visualized Characterization of Slurry during CMP Based on LIF

Abstract:

Chemical mechanical polishing has emerged recently as an indispensable processing technique in large scale integration. In chemical and mechanical polishing process, chemical and mechanical principle is the vital factor in the removal process. Little is known about what is occurring beneath a wafer during Chemical Mechanical Polishing (CMP) processes. The paper provides a LIF technology to visualize the fluid flow between the wafer and pad. In this paper, the experiment setup is built. And then, the images of fluorescence intensity excited by LIF have been obtained from CCD. Finally, the relationships between pH, temperature, laser power, film thickness and fluorescence intensity excited by LIF (Laser induced Fluorescence) are studied.

• Periodical: Key Engineering Materials (Volumes 315-316)
• Pages: 279-283
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.315-316.279
• Online since: July 2006
• Authors: Ju Long Yuan, Fei Yan Lou, Zhao Zhong Zhou, Zhi Wei Wang, Bing Hai Lv
• Keywords: Chemical Mechanical Polishing (CMP), Fluorescence Ratio, Laser Induced Fluorescence (LIF), Polishing

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