Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging

Abstract:

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In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.

Info:

Periodical:

Key Engineering Materials (Volumes 324-325)

Edited by:

M.H. Aliabadi, Qingfen Li, Li Li and F.-G. Buchholz

Pages:

231-234

DOI:

10.4028/www.scientific.net/KEM.324-325.231

Citation:

S. H. Choa "Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging", Key Engineering Materials, Vols. 324-325, pp. 231-234, 2006

Online since:

November 2006

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Price:

$35.00

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