Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging

Sung Hoon Choa

doi:10.4028/www.scientific.net/KEM.324-325.231

Paper Titles

Effect of Roller Working on Fatigue Strength of Structural Metals
p.213

Cumulative Damage-Based Stiffness Reliability Analysis of the Stochastic Structural System
p.219

Failure Analysis of the Stochastic Structural System
p.223

Thermo-Mechanical Behavior of MEMS Gyroscope Sensor Package Subjected to Temperature Change
p.227

Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging
p.231

Numerical Simulation of Rock Fracture under Dynamic Loading Using Manifold Method
p.235

Investigation into the Dynamic Fracture Properties of Large Scale Functionally Graded Materials
p.239

Effects of Randomness of Material Parameters on Crack Failure of Concrete
p.243

Plane Electromechanical Fieldes in a Piezoelectric Material with a Crack
p.247

HomeKey Engineering MaterialsKey Engineering Materials Vols. 324-325Experimental Studies of Through-Wafer Copper...

Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging

Abstract:

In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.