Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging
In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.
M.H. Aliabadi, Qingfen Li, Li Li and F.-G. Buchholz
S. H. Choa, "Experimental Studies of Through-Wafer Copper Interconnect in Wafer Level MEMS Packaging", Key Engineering Materials, Vols. 324-325, pp. 231-234, 2006