Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

Abstract:

Article Preview

(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

283-286

DOI:

10.4028/www.scientific.net/KEM.336-338.283

Citation:

Z. Zheng et al., "Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method", Key Engineering Materials, Vols. 336-338, pp. 283-286, 2007

Online since:

April 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.