Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

Zan Zheng; Xiao Ting Li; Gao Rong Han; Wen Jian Weng; Pi Yi Du

doi:10.4028/www.scientific.net/KEM.336-338.283

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338Structure and Dielectric Properties of Zn Doped...

Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

Abstract:

(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.

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Key Engineering Materials (Volumes 336-338)

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283-286

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https://doi.org/10.4028/www.scientific.net/KEM.336-338.283

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Online since:

April 2007

Authors:

Zan Zheng, Xiao Ting Li, Gao Rong Han, Wen Jian Weng, Pi Yi Du

Keywords:

Dielectric Property, PST Thin Film, Sol-Gel (SG)

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