Structure and Electric Property of BaTi2O5 Film by Laser Ablation

Chuan Bin  Wang; Rong Tu; Takashi Goto

doi:10.4028/www.scientific.net/KEM.350.103

Paper Titles

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Phase Transition Temperatures of Divalent and Trivalent Ions Substituted (Bi_1/2Na_1/2)TiO₃ Ceramics
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Crystal Phase and Orientation Dependence of Electro-Optic Effect in Epitaxial PLZT an PZT Films
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Structure and Electric Property of BaTi₂O₅ Film by Laser Ablation
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Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO₃/HfO₂/Si Structures
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Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation
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Preparation of Bi₄Ti₃O₁₂ Based Thick Films by Screen Printing
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 350Structure and Electric Property of BaTi2O5 Film by...

Structure and Electric Property of BaTi₂O₅ Film by Laser Ablation

Abstract:

BaTi2O5 film was prepared on MgO (100) substrate by laser ablation, and the structure and electric property of the film were investigated. The film was b-axis oriented and epitaxially grown on the substrate along two in-plane directions with the a-axes ([100]-orientation) perpendicular to each other. The b-axis oriented BaTi2O5 film exhibited a sharp permittivity maximum (~ 2000) and had a high Curie temperature (750 K). The electrical conductivity increased with temperature and showed the Arrhenius relationship having an activation energy of 1.25 eV.

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Periodical:

Key Engineering Materials (Volume 350)

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103-106

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https://doi.org/10.4028/www.scientific.net/KEM.350.103

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Online since:

October 2007

Authors:

Chuan Bin Wang, Rong Tu, Takashi Goto

Keywords:

BaTi₂O₅ Film, Electrical Conductivity, Epitaxy, Film, Laser Ablation, Permittivity

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