Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO3/HfO2/Si Structures
Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layers were successfully constructed on Si(100) substrates through the chemical solution deposition. The degree of c-axis orientation and microstructure of Y0.5Yb0.5MnO3 ferroelectrics was improved by the control of concentration of precursor solutions. Capacitance of Pt/Y0.5Yb0.5MnO3/HfO2/Si structure was almost constant over 104 s on the retention property.
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
K. Suzuki et al., "Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO3/HfO2/Si Structures", Key Engineering Materials, Vol. 350, pp. 107-110, 2007