Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO3/HfO2/Si Structures

Abstract:

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Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layers were successfully constructed on Si(100) substrates through the chemical solution deposition. The degree of c-axis orientation and microstructure of Y0.5Yb0.5MnO3 ferroelectrics was improved by the control of concentration of precursor solutions. Capacitance of Pt/Y0.5Yb0.5MnO3/HfO2/Si structure was almost constant over 104 s on the retention property.

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Periodical:

Edited by:

K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki

Pages:

107-110

DOI:

10.4028/www.scientific.net/KEM.350.107

Citation:

K. Suzuki et al., "Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO3/HfO2/Si Structures", Key Engineering Materials, Vol. 350, pp. 107-110, 2007

Online since:

October 2007

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Price:

$35.00

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