Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO3/HfO2/Si Structures

Kazuyuki Suzuki; Kaori Nishizawa; Takeshi Miki; Kazumi Kato

doi:10.4028/www.scientific.net/KEM.350.107

Paper Titles

Introduction of Fine Engineered Domain Configuration into Potassium Niobate Single Crystals
p.89

Phase Transition Temperatures of Divalent and Trivalent Ions Substituted (Bi_1/2Na_1/2)TiO₃ Ceramics
p.93

Crystal Phase and Orientation Dependence of Electro-Optic Effect in Epitaxial PLZT an PZT Films
p.99

Structure and Electric Property of BaTi₂O₅ Film by Laser Ablation
p.103

Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO₃/HfO₂/Si Structures
p.107

Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation
p.111

Preparation of Bi₄Ti₃O₁₂ Based Thick Films by Screen Printing
p.115

Figure of Merit for Thermoelectric Generation Obtained by Enhanced Transport Properties of [100] Oriented Beta-FeSi₂ Film
p.121

Fabrication and Application of MoSi₂-Thin-Film Electric Heaters
p.125

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Improvement of Orientation and Characterization of Dielectric Property for (Y,Yb)MnO₃/HfO₂/Si Structures

Abstract:

Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layers were successfully constructed on Si(100) substrates through the chemical solution deposition. The degree of c-axis orientation and microstructure of Y0.5Yb0.5MnO3 ferroelectrics was improved by the control of concentration of precursor solutions. Capacitance of Pt/Y0.5Yb0.5MnO3/HfO2/Si structure was almost constant over 104 s on the retention property.