Influences of Machining Parameters on Silicon Wafer Polished with Gel-Coupled Ultra-Fine Abrasive Polishing Pads

Juan Liu; Xi Peng Xu

doi:10.4028/www.scientific.net/KEM.359-360.279

Paper Titles

Design of Surface Finish Using Synchronous Process of Grinding and Electrochemical Finishing
p.259

Hydrodynamic Analysis of Circular Translational Polishing under Mixed Lubrication
p.264

Research on Nanoscale Material Removal Process Using Atomic Force Microscopy
p.269

Experimental Study of Precision Polishing of Hard and Brittle Material
p.274

Influences of Machining Parameters on Silicon Wafer Polished with Gel-Coupled Ultra-Fine Abrasive Polishing Pads
p.279

Study on Mechanical Polishing for CVD Diamond Films of Forming Nucleus Surface and Growing Surface
p.285

Research on the Hydrodynamic Electro-Chemical Mechanical Polishing for Silicon Wafer with Suspension Fluid
p.290

Study of Finishing Internal Surface Using Magnetic Force Generated by Rotating Magnetic Field in Electromotor
p.295

Experimental Study on Increasing Magnetic Abrasive Finishing Efficiency of Finishing Nonferromagnetic Materials
p.300

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Influences of Machining Parameters on Silicon Wafer Polished with Gel-Coupled Ultra-Fine Abrasive Polishing Pads

Abstract:

In this paper, a newly developed ultra-fine abrasive polishing pad by gel technology was adopted to polish silicon wafer on a nano-polishing machine. In order to evaluate the machining performances of the polishing pad, the influences of abrasive sizes, abrasive concentration and polishing parameters (pressure, rotating speed and machining time) on the silicon wafer were investigated respectively. Optical microscope and ZYGO 3D surface analyzer were applied to examine the surface morphologies and surface roughness of the polished silicon wafer respectively. The experimental results showed that the surface roughness of silicon wafer decreased with the decreasing of abrasive grits and the increasing of abrasive concentration and polishing parameters (pressure, rotating speed and polishing time) when polishing silicon wafer with the polishing pad containing Al2O3 abrasive. When abrasive concentration, polishing pressure and polishing time reached certain values, few changes would happen for the silicon wafer.