Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition

Abstract:

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Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

322-325

DOI:

10.4028/www.scientific.net/KEM.368-372.322

Citation:

G.X. Liu et al., "Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition", Key Engineering Materials, Vols. 368-372, pp. 322-325, 2008

Online since:

February 2008

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Price:

$35.00

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