Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition

G.X. Liu; F.K. Shan; Byoung Chul Shin; Won Jae Lee

doi:10.4028/www.scientific.net/KEM.368-372.322

Paper Titles

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film
p.308

Influence of Mechanical Milling and Annealing Atmosphere on the Photoluminescence Properties of ZnS:Cu,Cl Phosphors
p.312

Effect of Doping Mode on the Photoluminescence Property of CaS:Eu Phosphor
p.315

Ultraviolet Photoluminescence on Nano-Crystalline 6H-SiC
p.319

Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition
p.322

Synthesis and Characterization of AZO Thin Films by Sol-Gel Process: The Influences of Precursors and Dopants
p.326

Preparation and Spectral Properties of PVP-Modified ZnO Nanorods
p.329

Preparation of Sm₂O₃ Optical Thin Film by Hydrothermal Process
p.333

Photochromic Properties of WO₃ Thin films
p.336

HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Gallium and Nitrogen Co-Doped ZnO Thin Films by...

Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition

Abstract:

Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.