Effect of Dopant on N-Type Bi2Te2.7Se0.3 Thermoelectric Materials Fabricated by Spark Plasma Sintering

Dong Choul Cho; Jae Seol Lee; Chul Ho Lim; Chi Hwan Lee

doi:10.4028/www.scientific.net/KEM.368-372.544

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Effect of Dopant on N-Type Bi₂Te_2.7Se_0.3 Thermoelectric Materials Fabricated by Spark Plasma Sintering
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Effect of Dopant on N-Type Bi2Te2.7Se0.3...

Effect of Dopant on N-Type Bi₂Te_2.7Se_0.3 Thermoelectric Materials Fabricated by Spark Plasma Sintering

Abstract:

The n-type Bi2Te2.7Se0.3 compounds were fabricated to investigate the characterization of spark plasma sintering with various SbI3 dopant contents. The Bi2Te2.7Se0.3 compounds with SbI3 dopant content is exhibited n-type conduction characterization, but the Bi2Te2.7Se0.3 compounds without SbI3 dopant content is exhibited p-type conduction characterization. The maximum Seebeck coeficient represented with 0.05wt.% SbI3 dopant content. The Seebeck coefficient of the sintered sample with increasing sintering temperature is increased from -158 to -182 μV/K. The electrical resistivity and thermal conductivity with 0.05wt.% SbI3 dopant content were 1.0 m and 1.33 W/mK, respectively.