Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

Abstract:

Article Preview

In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

75-77

DOI:

10.4028/www.scientific.net/KEM.368-372.75

Citation:

K. H. Chen et al., "Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application", Key Engineering Materials, Vols. 368-372, pp. 75-77, 2008

Online since:

February 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.