Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

Kai Huang Chen; Ying Chung Chen; Wei Kuo Chia; Zhi Sheng Chen; Cheng Fu Yang; Ho Hua Chung

doi:10.4028/www.scientific.net/KEM.368-372.75

Paper Titles

Dielectric Behavior of (1-X)BaTiO₃-XCaCu_2.94Mn_0.06Ti₄O₁₂ Composite Ceramics
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Influence of Excess Bi₂O₃ on the Characteristics of (Na_0.5Bi_0.5)TiO₃-BaTiO₃ Ceramics
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Effects of Mn-Doping on the Piezoelectric and Ferroelectric Properties of (Na_0.8K_0.2)_0.5Bi_0.5TiO₃ Ceramics
p.69

Effects of Mn Doping on Dielectric Properties of BSTN Ceramics
p.72

Electrical and Physical Characteristics of Ba(Zr_0.1Ti_0.9)O₃ Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application
p.75

Nano-Precipitation in SrTiO₃-Based Functional Ceramics
p.78

Electrical Characterization and Microstructures of Tb-Doped Bi₄Ti₃O₁₂ Thin Films
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Cation Distribution and Structural Instability in Pr-Doped Bi₄Ti₃O₁₂
p.85

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi₄Ti₃O₁₂ Ceramics
p.88

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Electrical and Physical Characteristics of Ba(Zr_0.1Ti_0.9)O₃ Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

Abstract:

In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment.