Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics

Min Chen; W.K. An; A.H. Cai; Chong Qing Huang; K.L. Su; J. Liu

doi:10.4028/www.scientific.net/KEM.368-372.95

Paper Titles

Electrical Characterization and Microstructures of Tb-Doped Bi₄Ti₃O₁₂ Thin Films
p.82

Cation Distribution and Structural Instability in Pr-Doped Bi₄Ti₃O₁₂
p.85

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi₄Ti₃O₁₂ Ceramics
p.88

Electrical Characteristics and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Films
p.91

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics
p.95

Preparation and Dielectric Properties of the Layered Perovskite Sr₄Bi₄Ti₇O₂₄ Ferroelectric Ceramics
p.98

Ferroelectric Properties of Sol-Gel Derived Ca_1-xSr_xBi₄Ti₄O₁₅ Thin Films
p.100

Synthesis of Nanocrystalline 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ Powder by a Citrate Method
p.103

Processing and Properties of Ferroelectric Bi_4-x La _xTi₃O₁₂ Ceramics
p.106

HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Effect of Tb Substitution on Electrical...

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics

Abstract:

The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively.

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Key Engineering Materials (Volumes 368-372)

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95-97

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https://doi.org/10.4028/www.scientific.net/KEM.368-372.95

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February 2008

Authors:

Min Chen, W.K. An, A.H. Cai, Chong Qing Huang, K.L. Su, J. Liu

Keywords:

Dielectric, Ferroelectric

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