Machinability Investigation of Reaction-Bonded Silicon Carbide by Single-Point Diamond Turning

Zhi Yu Zhang; Ji Wang Yan; Tsunemoto Kuriyagawa

doi:10.4028/www.scientific.net/KEM.389-390.151

Paper Titles

Geometrical Simulation of Surface Finish Improvement in Helical Scan Grinding Method by Means of 3D-CAD Model
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Planing of Cobalt-Free Tungsten Carbide Using a Diamond Tool -Cutting Temperature and Tool Wear-
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Cutting Temperature Measurement in Turning with Actively Driven Rotary Tool
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Coolant Effects on Tool Wear in Machining Single-Crystal Silicon with Diamond Tools
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Machinability Investigation of Reaction-Bonded Silicon Carbide by Single-Point Diamond Turning
p.151

High Speed Cutting of Titanium Alloy with PCD Tools
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Development of DLC Coated Tool for Cutting of Aluminum Alloy －Influence of Deposition Condition on Cutting Characteristic－
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Observations on Orthogonal Cutting Processes - Effect of Friction between Tool and Work Material -
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Development of A New Cutting Fluid Supply System for Near Dry Machining Process
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 389-390Machinability Investigation of Reaction-Bonded...

Machinability Investigation of Reaction-Bonded Silicon Carbide by Single-Point Diamond Turning

Abstract:

Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with many merits such as low manufacturing temperature, dense structure, high purity and low cost. In the present paper, the precision machinability of RB-SiC was studied by microindentation and single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on surface roughness and cutting force was investigated. Results showed that there was no clear ductile-brittle transition in machining behavior. The material removal mechanism involves falling of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from large-scale cleavage fractures. The minimum surface roughness depends on the initial material microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates that SPDT can be used as a high-efficiency machining process for RB-SiC.

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Key Engineering Materials (Volumes 389-390)

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151-156

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https://doi.org/10.4028/www.scientific.net/KEM.389-390.151

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Online since:

September 2008

Authors:

Zhi Yu Zhang, Ji Wang Yan, Tsunemoto Kuriyagawa

Keywords:

Diamond Turning, Ductile Machining, Machinability, Reaction-Bonded Silicon Carbide

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