Electrical Resistivity Control of Hot-Pressed Aluminum Nitride Ceramics

Naohito Yamada; Jun Yoshikawa; Yuji Katsuda; Hiroaki Sakai

doi:10.4028/www.scientific.net/KEM.403.49

Paper Titles

Sintering Shrinkage Behavior and Mechanical Properties of HfO₂-Added Si₃N₄ Ceramics
p.35

Fabrication and Evaluation of AlN–SiC Solid Solutions with p-Type Electrical Conduction
p.39

Atomic Resolution and In Situ Characterization of Structural Ceramics
p.43

Non-Oxide Ceramic Nanocomposites with Multifunctionality
p.45

Electrical Resistivity Control of Hot-Pressed Aluminum Nitride Ceramics
p.49

Fracture Resistance and Wear Properties of Silicon Nitride Ceramics
p.53

Oxidation of Rare Earth Silicon Oxynitride J-Phases
p.57

Effect of Second Phase After-Heat Treatment on the Thermal Conductivity of AlN Ceramics
p.61

Thermal Conductivity Measurement of the AlN Ceramics at the Grain Scale Using Thermoreflectance Technique
p.65

HomeKey Engineering MaterialsKey Engineering Materials Vol. 403Electrical Resistivity Control of Hot-Pressed...

Electrical Resistivity Control of Hot-Pressed Aluminum Nitride Ceramics

Abstract:

Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments. For tailoring the electrical resistivity to satisfy the requirements of each component, several kinds of approaches were investigated for hot-pressed AlN ceramics. Three techniques to control the electrical resistivity of AlN ceramics were adopted: (1) AlN intragranular control, (2) intergranular phase control and (3) incorporation of electrically conductive second phase particles. In this paper, we introduce examples of each technique. The first one is addition of a small amount of Y2O3. The resistivity varied from 1015 Ωcm to 1010 Ωcm with the Y2O3 amount. The second one is addition of Sm2O3. The resistivity also varied from 1015 Ωcm to 1010 Ωcm with the Sm2O3 amount. The third one is incorporation of in-situ synthesized Boron Carbonitride (B-C-N). Networking of B-C-N platelets drastically decreased the resistivity to the range less than 102 Ωcm. By these techniques, it was possible to control the resistivity of AlN ceramics in a wide range with a small amount of additives.

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Periodical:

Key Engineering Materials (Volume 403)

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49-52

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.403.49

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Online since:

December 2008

Authors:

Naohito Yamada, Jun Yoshikawa, Yuji Katsuda, Hiroaki Sakai

Keywords:

Aluminum Nitride (AlN), Electrical Resistivity

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References

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