Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding

Hsiang Chen Hsu; Pei Chieh Chin; Chin Yuan Hu; Wei Yao Chang; Chang Lin Yeh; Yi Shao Lai

doi:10.4028/www.scientific.net/KEM.419-420.489

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 419-420Dynamic Analysis on Underlay Microstructure for...

Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding

Abstract:

Two major analyses were conducted in this paper. In the first, experimental procedures are accomplished to measure the tensile mechanical properties of ultra thin gold wire (=1mil) before/after electric flame-off (EFO). Characteristics of free air ball (FAB), heat affected zone (HAZ) and as-drawn wire have been carefully investigated by nanoindentation, microhardness and self-design pull test fixture. Secondary, with the obtained experimental material data, a comprehensive finite element model using software ANSYS/LS-DYNA is successfully developed to simulate the wirebonding. Dynamic analysis is performed to evaluate the overall stress distributions on the underlay microstructure of Cu/low-k wafer. Special emphasizes are focused on the Copper via and the intermetal dielectric (IMD)/undoped silica glass (USG) dielectric microstructure.

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Periodical:

Key Engineering Materials (Volumes 419-420)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.419-420.489

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Online since:

October 2009

Authors:

Hsiang Chen Hsu, Pei Chieh Chin, Chin Yuan Hu, Wei Yao Chang, Chang Lin Yeh, Yi Shao Lai

Keywords:

Cu/Low-k Wafer, Free Air Ball, Heat Affected Zone (HAZ), Microhardness, Nanoidentation

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References

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