Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding

Abstract:

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Two major analyses were conducted in this paper. In the first, experimental procedures are accomplished to measure the tensile mechanical properties of ultra thin gold wire (=1mil) before/after electric flame-off (EFO). Characteristics of free air ball (FAB), heat affected zone (HAZ) and as-drawn wire have been carefully investigated by nanoindentation, microhardness and self-design pull test fixture. Secondary, with the obtained experimental material data, a comprehensive finite element model using software ANSYS/LS-DYNA is successfully developed to simulate the wirebonding. Dynamic analysis is performed to evaluate the overall stress distributions on the underlay microstructure of Cu/low-k wafer. Special emphasizes are focused on the Copper via and the intermetal dielectric (IMD)/undoped silica glass (USG) dielectric microstructure.

Info:

Periodical:

Key Engineering Materials (Volumes 419-420)

Edited by:

Daizhong Su, Qingbin Zhang and Shifan Zhu

Pages:

489-492

DOI:

10.4028/www.scientific.net/KEM.419-420.489

Citation:

H. C. Hsu et al., "Dynamic Analysis on Underlay Microstructure for Cu/Low-k Wafer during Wire Bonding", Key Engineering Materials, Vols. 419-420, pp. 489-492, 2010

Online since:

October 2009

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Price:

$35.00

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