The Influence of Annealing Temperature on the Characteristics of 0.95 (Na_0.5Bi_0.5)TiO₃-0.05 BaTiO₃ Thin Films

Abstract:

In this study, 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200oC for 2h is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600- 800oC for 60min. The morphologies of NBT- BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns. The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600oC are better than other thin films under different CTA temperatures. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.

• Periodical: Key Engineering Materials (Volumes 434-435)
• Pages: 263-266
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.434-435.263
• Online since: March 2010
• Authors: Chien Chen Diao, Chia Ching Wu, Cheng Fu Yang, Chao Chin Chan
• Keywords: Conventional Thermal Annealing, NBT-BT3, RF Magnetron Sputter

References

[1] H. Buhay, S. Sinharoy, W. H. Kasner, et al.: Appl. Phys. Lett. Vol. 58 (1991), p.1470.

[2] S. Y Wu: IEEE Trans. Electro. Dev. Vol. 21 (1974), p.499.

[3] S.Y. Wu: Ferroelectric Vol. 11 (1976), p.379.

[4] N. Scarisoreanu, F. Craciun, V. Ion, et al.: Appl. Surf. Sci. Vol. 254 (2007), p.1292.

[5] H.W. Cheng, X.J. Zhang, S.T. Zhang, et al.: Appl. Phys. Let. Vol. 85 (2004), p.2319.

[6] T. Kimura, T. Takahashi, T. Tani, Y. Saito: Ceram. Inter. Vol. 30 (2004), p.1161.

[7] X.Y. Zhou, H.S. Gu, Y. Wang, et al.: Mater. Let. Vol. 59 (2005), p.1649.

[8] Y.F. Wei, H.H. Chung, C.F. Yang, et al.: J. Phys. Chem. Solids Vol. 69 (2008), p.934.

[9] Y.F. Wei, C.H. Kao, C.F. Yang, et al.: Key Eng. Mater. Vol. 368-372 (2008), p.65.

[10] X.X. Wang, S.W. Or, X.G. Tang, et al.: Solid State Commun. Vol. 134 (2005), p.659.