Develop Single-Phase High Dielectric Constant SiO2-Based Composite Gate Dielectric

Abstract:

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In this study, we hoped to find the single-phase high dielectric FET gate-used ceramic materials, which will be used in the sputtering method and have the dielectric constants higher than those of SiO2 and Si3N4. TiO2, La2O3 and ZrO2 are mixed with SiO2 to format the (1-x) TiO2-x SiO2, (1-x) ZrO2-x SiO2 and (1-x) La2O3-x SiO2 compositions, where x is dependent on the different raw materials. The all compositions are calcined at 1100oC and sintered at 1400oC~ 1550oC for 2hrs, and the X-ray patterns are used to find the crystal phases of all sintered ceramics. Because of the existence of single-phase, the sintering and dielectric characteristics of 0.3 La2O3-0.7 SiO2 ceramic are further developed.

Info:

Periodical:

Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong

Pages:

259-262

DOI:

10.4028/www.scientific.net/KEM.434-435.259

Citation:

C. C. Chan et al., "Develop Single-Phase High Dielectric Constant SiO2-Based Composite Gate Dielectric", Key Engineering Materials, Vols. 434-435, pp. 259-262, 2010

Online since:

March 2010

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Price:

$35.00

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