Develop Single-Phase High Dielectric Constant SiO2-Based Composite Gate Dielectric

Chao Chin Chan; Yin Fang Wei; Chien Chen Diao; Yuan Tai Hsieh; Ping Shou Cheng

doi:10.4028/www.scientific.net/KEM.434-435.259

Paper Titles

Characterization of Microwave Ceramics with Low Permittivity and High Quality Factors
p.244

Fabrication of Barium Titanate Inverse Opals by Sol-Gel Electrophoretic Deposition Process
p.247

Dielectric Properties of CaCu₃Ti₄O₁₂ Ceramics
p.253

Sol-Gel Process for the Synthesis of Single-Phased BaTi₂O₅ Powder
p.256

Develop Single-Phase High Dielectric Constant SiO₂-Based Composite Gate Dielectric
p.259

The Influence of Annealing Temperature on the Characteristics of 0.95 (Na_0.5Bi_0.5)TiO₃-0.05 BaTiO₃ Thin Films
p.263

The Influence of Oxygen Plasma Treatment on the Electrical Properties of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ Thin Films
p.267

The Electrical and Physical Properties of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ Thin Films under Conventional Annealing Process
p.271

Fabrication and Characterization of Sr_0.7Ca_0.3TiO₃ Substrates Using Aqueous Tape Casting Process
p.275

HomeKey Engineering MaterialsKey Engineering Materials Vols. 434-435Develop Single-Phase High Dielectric Constant...

Develop Single-Phase High Dielectric Constant SiO₂-Based Composite Gate Dielectric

Abstract:

In this study, we hoped to find the single-phase high dielectric FET gate-used ceramic materials, which will be used in the sputtering method and have the dielectric constants higher than those of SiO2 and Si3N4. TiO2, La2O3 and ZrO2 are mixed with SiO2 to format the (1-x) TiO2-x SiO2, (1-x) ZrO2-x SiO2 and (1-x) La2O3-x SiO2 compositions, where x is dependent on the different raw materials. The all compositions are calcined at 1100oC and sintered at 1400oC~ 1550oC for 2hrs, and the X-ray patterns are used to find the crystal phases of all sintered ceramics. Because of the existence of single-phase, the sintering and dielectric characteristics of 0.3 La2O3-0.7 SiO2 ceramic are further developed.