Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

Abstract:

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Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

Info:

Periodical:

Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong

Pages:

499-501

DOI:

10.4028/www.scientific.net/KEM.434-435.499

Citation:

F. T. Meng et al., "Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition ", Key Engineering Materials, Vols. 434-435, pp. 499-501, 2010

Online since:

March 2010

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Price:

$35.00

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