Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

Fan Tao Meng; Shan Yi Du; Gui Shan Tian; Yu Min Zhang

doi:10.4028/www.scientific.net/KEM.434-435.499

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 434-435Characterization of Silicon Carbide Grown on...

Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

Abstract:

Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

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Key Engineering Materials (Volumes 434-435)

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499-501

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https://doi.org/10.4028/www.scientific.net/KEM.434-435.499

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Online since:

March 2010

Authors:

Fan Tao Meng, Shan Yi Du, Gui Shan Tian, Yu Min Zhang

Keywords:

Chemical Vapor Deposition (CVD), Reaction-Bonded SiC, SiC Whisker, Silicon Carbide (SiC)

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References

[1] J.G. Lee, I.B. Cutler: Am. Ceram. Soc. Bull. Vol. 54 (1975), p.195.

Google Scholar

[2] W.J. Choyke, R.F. Farich and R.A. Hoffman: Appl. Opt. Vol. 17(1976), p. (2006).

Google Scholar

[3] V. Rehn， J.O. Jones: Pot. Engr. Vol 17(1978), p.504.

Google Scholar

[4] S.K. Lee, C.H. Kim, J. Am. Ceram. Soc. Vol. 77 (1994), p.1655.

Google Scholar

[5] D.C. Lim, Y.J. Lee and D.J. Choi: Surf. Coat. Tech. Vol. 192(2005), p.247.

Google Scholar

[6] S.A. Hyung, J.C. Doo: Surf. Coat. Tech. Vol. 154(2002), p.276.

Google Scholar

[7] F.C. Frank: Disuss. Farad. Soc. Vol. 5(1949), p.48.

Google Scholar

[8] I. Leu, Y. Ku, and M. Hon: Mater. Chem. Phys. Vol. 56(1998), p.256.

Google Scholar

[9] G. Mcmahon, G.J.C. Carpenter and T.F. Malis: J. Mater. Sci. Vol. 26(1991), p.5655.

Google Scholar

[10] L. Wang, H. Wada and L.F. Allard: J. Mater. Re. Vol. 7(1992), p.148.

Google Scholar

[11] Y.J. Lee: Thesis (Yonsei University, South Korea, 1999) Fig. 3. SEM images of deposits grown at different depositing temperature. (a) 1100°C, (b) 1150°C. The flow rate of mixture of H2 and MTS was 300sccm and Ar was 840sccm, the depositing pressure was 50 Torr(6. 7kPa).

Google Scholar