Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films
W-TiO2 (W, tungsten) dual-layer thin films are deposited by RF magnetron sputtering onto glass substrates and annealed at 150oC~400oC for 4hrs. The crystal structure, morphology, and trans- mittance of annealed W-TiO2 dual-layer thin films are investigated by X-ray diffraction, FESEM, and UV-Vis spectrometer, respectively. The annealing temperatures have large effect on the properties of W-TiO2 dual-layer thin films. The band gap energy values of W-TiO2 dual-layer thin films are evaluated from (h)1/2 versus energy plots. The energy gap for un-annealed W-TiO2 dual-layer thin film is 3.16 eV. As the annealing temperature increases from 150oC to 400oC, the energy gap decreases from 3.16 eV to 3.10 eV.
Wei Pan and Jianghong Gong
C. C. Huang et al., "Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films", Key Engineering Materials, Vols. 434-435, pp. 506-509, 2010