Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films

Abstract:

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W-TiO2 (W, tungsten) dual-layer thin films are deposited by RF magnetron sputtering onto glass substrates and annealed at 150oC~400oC for 4hrs. The crystal structure, morphology, and trans- mittance of annealed W-TiO2 dual-layer thin films are investigated by X-ray diffraction, FESEM, and UV-Vis spectrometer, respectively. The annealing temperatures have large effect on the properties of W-TiO2 dual-layer thin films. The band gap energy values of W-TiO2 dual-layer thin films are evaluated from (h)1/2 versus energy plots. The energy gap for un-annealed W-TiO2 dual-layer thin film is 3.16 eV. As the annealing temperature increases from 150oC to 400oC, the energy gap decreases from 3.16 eV to 3.10 eV.

Info:

Periodical:

Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong

Pages:

506-509

DOI:

10.4028/www.scientific.net/KEM.434-435.506

Citation:

C. C. Huang et al., "Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films", Key Engineering Materials, Vols. 434-435, pp. 506-509, 2010

Online since:

March 2010

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Price:

$35.00

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