Paper Titles

Optimal Parameter Design of Solder Residue in Flip Chip Process by Using Taguchi Method
p.543

A New Solution Method for Homogenization of Effective Properties of Electromagnetic Honeycombs
p.551

Surface Roughness and Stress Responses of a Feldspar Porcelain to Fatigue Impact
p.557

FEA-Predicted Subsurface Damage in Micro Finishing of a Feldspar Porcelain Using Fine-Grit Dental Burs
p.562

Production, Characterization and Application of Silicon-on-Sapphire Wafers
p.567

A Vacuum Sucking Approach to Preventing Chips from Attaching to Machined Surface in Cutting of KDP Crystals
p.573

Critical Undeformed Chip Thickness and Cutting Pressure in Relation to Ductile Mode Cutting of KDP Crystal
p.582

Influence of the Workpiece Crystallographic Orientation on Ultra-Precision Turning of KDP Crystals
p.588

Some Aspects of Improving Integrity of Machined Surfaces on Al/SiCp Metal Matrix Composites
p.596

HomeKey Engineering MaterialsKey Engineering Materials Vol. 443Production, Characterization and Application of...

Production, Characterization and Application of Silicon-on-Sapphire Wafers

Article Preview

Abstract:

Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they can reduce noise and current leakage in metal oxide semiconductor transistors. However, there are some issues in producing defect-free SOS wafers. Dislocations, misfit, micro twins and residual stresses can emerge during the SOS processing and they will reduce the performance of an SOS product. For some reasons, research publications on SOS in the literature are not extensive, and as a result, the information available in the public domain is fragmentary. This paper aims to review the subject matter in an as complete as possible manner based on the published information about the production, characterization and application of SOS wafers.

You might also be interested in these eBooks

Advances in Materials Processing IX

Info:

Periodical:

Key Engineering Materials (Volume 443)

Pages:

567-572

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.443.567

Citation:

Cite this paper

Online since:

June 2010

Authors:

Alokesh Pramanik, Mei Liu, Liang Chi Zhang

Keywords:

Defect, Residual Stress, Silicon on Sapphire, Thin Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2010 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] K. Sawada et al.: Journal of Crystal Growth Vol. 97 (1989), p.587.

[2] H.M. Manasevit and W.I. Simpson: J. Appl. Phys. Vol. 35 (1964), p.1349.

[3] George Imthurnm: http: /www. peregrine-semi. com/articles/History_SOS_73-0020-02. pdf.

[4] L.R. Weisberg and E.A. Miller: Metallurgical Society of American Institute of Mining, Metallurgical and Petroleum Engineers -Transactions Vol. 242 (1968), p.479.

[5] C.T. Naber and J.E. O'Neal: Metallurgical Society of American Institute of Mining, Metallurgical and Petroleum Engineers -Transactions Vol. 242 (1968), p.470.

[6] M.S. Abrahams, et al.: J. Appl. Phys. Vol. 47 (1976), p.5139.

[7] T. Inoue et al.: Nuclear Instruments and Methods Vol. 182-183 (1981), p.683.

[8] M.S. Abrahams and C.T. Buiocchi: Appl. Phys. Lett. Vol. 27 (1975), p.275.

[9] T. Nakamura et al.: http: /www. oki. com/en/otr/200/downloads/otr-200-R18. pdf.

[10] T. Inoue and T. Yoshii: Appl. Phys. Lett. Vol. 36 (1980), p.64.

[11] Y. Yamamoto, I.H. Wilson and T. Itoh: Appl. Phys. Lett. Vol. 34 (1979), p.403.

[12] M.E. Roulet, et al.: J. Appl. Phys. Vol. 50 (1979), p.5536.

[13] M. Ishida, et al.: J. Appl. Phys. Vol. 64 (1988), p. (2087).

[14] J.C. Bean: AppI. Phys. Letters Vol. 36 (1980), p.741.

[15] K. Sawada, et al.: Journal of Crystal Growth Vol. 97 (1989), p.587.

[16] H. Hirayama, T. Tatsumi and N. Aizaki: Appl. Phys. Letters Vol. 52 (1988), p.1484.

[17] G. P. Imthurn et al.: J. Appl. Phys. Vol. 72 (1992), p.2526.

[18] R.W. Bicknell, B.A. Joyce, J.H. Neave and G. V Smith: Philos. Mag. Vol. 14(1966), p.31.

[19] M. S. Abrahams and C.J. Buiocchi: J. Appl. Phys. Vol. 45(8) (1974), p.3315.

[20] T. Hayashi and S. Kurosawa: Journal of Crystal Growth Vol. 45(1978), p.426.

[21] F. A. Ponce and J. Aranovich: Appl. Phys. Lett. Vol. 38(6) (1980), p.439.

[22] M.E. Twigg and E. D Richmond: J. Appl. Phys. Vol. 64 (1988), p.3037.

[23] M. E. Twigg, E. D Richmond and J.G. Pellegrino: J. Appl. Phys. Vol. 67 (1990), p.370.

[24] T. Inoue and T. Yoshii, Nuclear Instruments and Methods Vol. 182/183(1981), P. 683.

[25] S.T. Picraux: Appl. Phys. Lett. Vol. 20 (1972), p.91.

[26] R. Zeyfang: Thin Solid Films Vol. 6(1970), p.321.

[27] J. Trilhe, J. Borel and J. P. Gonchond: J. Appl. Phys. Vol. 51 (1980), p. (2003).

[28] J. Trilhe, G. Rolland and J. Borel: Communication 150th JES Meeting Las Vegas, (1976).

[29] R.T. Smith and C.E. Weitzel: Journal of Crystal Growth Vol. 58(1982), p.61.

[30] C.Y. Ang and H.M. Manasevit: Solid-State Electronics Vol. 8 (1965), P. 994.

[31] D.J. Dumin: J. Appl. Phys. Vol. 36 (9) (1965), p.2700.

[32] T. Englert and G. Abstreiter: Solid-State Electronics Vol. 23(1979), p.31.

[33] K.I. Yamazaki, et al.: J. Appl. Phys. Vol. 23 (1984), p.681.

[34] K.I. Yamazaki, et al.: J. Appl. Phys, Vol. 23 (1984), p. L403.

[35] S.S. Lau, S. Matteson and J.W. Mayer et al.: Appl. Phys. Lett. Vol. 34 (1979), p.76.

[36] H.S. Mavi, A.K. Shukla, K.P. Jain and S.C. Abbi: J. Appl. Phys. Vol. 69 (1991), p.7815.

[37] T. Jr. Vreeland: J. Mater. Res. Vol. 1(5) (1986), p.712.

[38] E. Gartstein: Physica B Vol. 248 (1998), p.79.

[39] M. Liu, L.C. Zhang, A. Brawley and P. Atanackovic: Determining the complete residual stress tensors in SOS hetero-epitaxial thin film systems by the technique of x-ray diffraction, The 9 th Asia-Pacific Conference on Materials Processing, Sydney Australia, 7-10 June 2010 (under review).

DOI: 10.4028/www.scientific.net/kem.443.742

[40] Information on http: /iopp. fileburst. com/microsites/C000015998/Yole_Sapphire_Market_ Report _2008_flyer. pdf.

[41] D Robinette: http: /www. mpdigest. com/issue/Articles/2009/may/peregrine/Default. asp.