Dielectric Properties of HfO2 Films Prepared on Flexible Polymer Substrates Using UV Irradiation

Kazuyuki Suzuki; Kazumi Kato

doi:10.4028/www.scientific.net/KEM.445.164

Paper Titles

Evaluation of the Structures and Oxidation Resistances of MoSi₂-Si Composite Thin Films
p.148

Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO₂_+x Thin Films with Excess Oxygen
p.152

Tunable Barium Strontium Titanate Thin Films by CSD
p.156

Comparison of Thermal Stability of Epitaxially Grown (La_0.5Sr_0.5)CoO₃ and (La_0.6Sr_0.4)MnO₃ Thin Films Deposited on Si Substrate
p.160

Dielectric Properties of HfO₂ Films Prepared on Flexible Polymer Substrates Using UV Irradiation
p.164

Preparation of Barium Titanate Nanoparticles by Particle Growth Control
p.171

Preparation of Strontium Titanate / Barium Titanate Complex Nanoparticles Using New Titanium Chelate Compounds
p.175

Thermal Property of BaO-TiO₂-GeO₂ Glass and the Crystallization Behavior
p.179

Dispersion of Barium Titanate and Strontium Titanate Nanocubes and their Selective Accumulations
p.183

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Dielectric Properties of HfO₂ Films Prepared on Flexible Polymer Substrates Using UV Irradiation

Abstract:

The HfO2 films were prepared on the ITO/polyimide substrate using alkoxy-derived precursor solutions at low temperature. The HfO2 films prepared by UV-assisted process using the precursor solution modified with diethanolamine had smooth surface and RMS roughness values of HfO2 film were 1.2nm. The electrical properties of HfO2 films were improved by optimization of preparation condition. The leakage current density at 1V was below 10-5A/cm2. The dielectric constant was about 20. The loss tangent was below 0.1.