Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO2+x Thin Films with Excess Oxygen
Resistance random access memory (RRAM) is attractive as a next-generation form of nonvolatile memory. We investigated an electric field-induced resistance change of SrFeO2+x film as a candidate for RRAM material. SrFeO2.5-x film prepared at 300 oC showed hysteresis in its current-voltage curve and distinct pulse-switching properties. On the other hand, the sample prepared below 280 oC showed hysteresis in its current-voltage curve but didn’t show pulse-switching properties. The amount of oxygen in the sample and easiness of oxygen migration play important roles in the resistance-switching properties.
Shinobu Fujihara and Tadashi Takenaka
T. Yokota et al., "Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO2+x Thin Films with Excess Oxygen", Key Engineering Materials, Vol. 445, pp. 152-155, 2010