Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO2+x Thin Films with Excess Oxygen

Takeshi Yokota; Shinya Kito; Shotaro Murata; Yasutoshi Tsuboi; Manabu Gomi

doi:10.4028/www.scientific.net/KEM.445.152

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 445Relationships between Negative Differential...

Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO₂_+x Thin Films with Excess Oxygen

Abstract:

Resistance random access memory (RRAM) is attractive as a next-generation form of nonvolatile memory. We investigated an electric field-induced resistance change of SrFeO2+x film as a candidate for RRAM material. SrFeO2.5-x film prepared at 300 oC showed hysteresis in its current-voltage curve and distinct pulse-switching properties. On the other hand, the sample prepared below 280 oC showed hysteresis in its current-voltage curve but didn’t show pulse-switching properties. The amount of oxygen in the sample and easiness of oxygen migration play important roles in the resistance-switching properties.

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Periodical:

Key Engineering Materials (Volume 445)

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152-155

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.445.152

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Online since:

July 2010

Authors:

Takeshi Yokota, Shinya Kito, Shotaro Murata, Yasutoshi Tsuboi, Manabu Gomi

Keywords:

Electric Memory Device, Interface State, Oxidatio-Reduction, ReRAM

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References

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