Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO2+x Thin Films with Excess Oxygen

Abstract:

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Resistance random access memory (RRAM) is attractive as a next-generation form of nonvolatile memory. We investigated an electric field-induced resistance change of SrFeO2+x film as a candidate for RRAM material. SrFeO2.5-x film prepared at 300 oC showed hysteresis in its current-voltage curve and distinct pulse-switching properties. On the other hand, the sample prepared below 280 oC showed hysteresis in its current-voltage curve but didn’t show pulse-switching properties. The amount of oxygen in the sample and easiness of oxygen migration play important roles in the resistance-switching properties.

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Periodical:

Edited by:

Shinobu Fujihara and Tadashi Takenaka

Pages:

152-155

DOI:

10.4028/www.scientific.net/KEM.445.152

Citation:

T. Yokota et al., "Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO2+x Thin Films with Excess Oxygen", Key Engineering Materials, Vol. 445, pp. 152-155, 2010

Online since:

July 2010

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$35.00

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