Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining

Abstract:

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In the X-ray fluorescence analysis on sub-micron particle, application of the doubly curved crystal (DCC) spectrometer with Johansson-type geometry is effective to improve the lowest limit of detection because DCC makes it possible to focus and monochromatize an X-ray beam simultaneously. A strain-free crystal is essential for the high-performance focusing crystal spectrometer. We propose the application of the open-air type numerically controlled plasma chemical vaporization machining (NC-PCVM), which utilizes neutral reactive species generated by atmospheric pressure plasma, to fabricate the DCC substrate. By applying NC-PCVM technique, a curvature radius error of 0.08% was obtained, and there was no degradation of the crystallinity of the Si (111) substrate.

Info:

Periodical:

Key Engineering Materials (Volumes 447-448)

Edited by:

Jianhong Zhao, Masanori Kunieda, Guilin Yang and Xue-Ming Yuan

Pages:

213-217

DOI:

10.4028/www.scientific.net/KEM.447-448.213

Citation:

M. Hosoda et al., "Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining", Key Engineering Materials, Vols. 447-448, pp. 213-217, 2010

Online since:

September 2010

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Price:

$35.00

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