Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining

Mao Hosoda; Kazuaki Ueda; Mikinori Nagano; Nobuyuki Zettsu; Shoichi Shimada; Kazuo Taniguchi; Kazuya Yamamura

doi:10.4028/www.scientific.net/KEM.447-448.213

Paper Titles

Parametric Study of Micro Machining Three Dimensional Microstructure with the Tiny-Grinding Wheel Based on the EMR Effect
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Effect of Tool Cone Angle on Micro Machining Based on the EMR Effect
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On-Machine Heat Treatment System Using YAG Laser: Laser Hardening of Micro-Cutting Edge
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Fabrication of Ultraprecision Millimeter-Thick Elliptical Neutron Focusing Mirror Substrate by Local Wet Etching
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Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining
p.213

Effect of Substrate Heating in Thickness Correction of Quartz Crystal Wafer by Plasma Chemical Vaporization Machining
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Research on Ultrasonic Vibration Combined with Grinding Machining and its Application in Processing Brittle Hard Materials
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Study on Machining of Cracking Notches for Automotive Connecting Rod Using WEDM
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Micro-EDM for an Aluminium Matrix Composite
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 447-448Fabrication of Damage-Free Curved Silicon Crystal...

Fabrication of Damage-Free Curved Silicon Crystal Substrate for a Focusing X-Ray Spectrometer by Plasma Chemical Vaporization Machining

Abstract:

In the X-ray fluorescence analysis on sub-micron particle, application of the doubly curved crystal (DCC) spectrometer with Johansson-type geometry is effective to improve the lowest limit of detection because DCC makes it possible to focus and monochromatize an X-ray beam simultaneously. A strain-free crystal is essential for the high-performance focusing crystal spectrometer. We propose the application of the open-air type numerically controlled plasma chemical vaporization machining (NC-PCVM), which utilizes neutral reactive species generated by atmospheric pressure plasma, to fabricate the DCC substrate. By applying NC-PCVM technique, a curvature radius error of 0.08% was obtained, and there was no degradation of the crystallinity of the Si (111) substrate.